Stacked Semiconductor Die Bonding Structure for Higher Integration Density
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Solution Overview
Problem
The semiconductor industry faces challenges in miniaturization, higher speed, greater bandwidth, lower power consumption, and latency due to limitations in packaging techniques of semiconductor dies, particularly with System-on-Integrated-Circuit (SoIC) components, which require innovative fabrication processes to enhance integration density and efficiency.
Innovation Solution
The process involves forming a semiconductor die with a semiconductor substrate, interconnect structure, and bonding structure, including dielectric layers and conductive pillars, where conductive barrier layers are used to create efficient electrical connections and encapsulation, allowing for advanced packaging techniques such as face-to-face bonding and chip-to-wafer bonding to achieve compact and functional semiconductor structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional packaging techniques are used for semiconductor dies, then manufacturing processes are simpler, but integration density and compactness are limited
Solution Approach 1:
The patent transitions from traditional planar packaging to three-dimensional stacking architecture, where multiple semiconductor dies are vertically stacked and bonded together. This dimensional change enables significantly higher integration density by utilizing the vertical space rather than only horizontal expansion, directly resolving the contradiction between integration density and packaging complexity.
Solution Approach 2:
The patent implements a nested structure where multiple semiconductor dies are stacked and bonded together in a hierarchical arrangement. Each die is encapsulated within the overall stacked structure, with lower dies supporting upper dies. This nesting approach maximizes the use of vertical space and achieves high integration density while maintaining a compact form factor.
2Quantity of substance
If minimum feature size is reduced to increase integration density, then more components can be integrated, but manufacturing precision requirements increase
Solution Approach 1:
The patent divides the semiconductor system into multiple separate dies that are processed independently and then bonded together. Each die can be manufactured with standard feature sizes, avoiding the need to reduce minimum feature size across the entire system. This segmentation allows high integration density through stacking while maintaining relaxed manufacturing precision requirements for individual dies.
3Adaptability or versatility
If multiple semiconductor dies are stacked and bonded together, then compactness and multi-functionality are achieved, but fabrication process complexity increases
Solution Approach 1:
The patent creates a universal stacked die architecture where each die can perform different functions (logic, memory, I/O, etc.) while following a standardized bonding interface and fabrication process. This multi-functionality is achieved through the modular stacked structure, allowing different functional dies to be combined in various configurations without requiring entirely new fabrication processes for each application.
Solution Approach 2:
The patent performs preliminary bonding of semiconductor dies to form a stacked structure before final encapsulation and testing. This preliminary action allows for intermediate verification and alignment adjustments, reducing the overall fabrication process complexity by breaking down the complex multi-die integration into manageable stages rather than attempting to complete all bonding operations simultaneously.
4Reliability
If advanced bonding techniques are used to achieve face-to-face bonding, then electrical connections are more efficient, but manufacturing difficulty increases
Solution Approach 1:
The patent implements face-to-face bonding by orienting bonding pads on opposite faces of each semiconductor die, enabling direct vertical electrical connections through the stacked structure. This dimensional approach to electrical connectivity achieves efficient signal transmission with fewer interconnection layers compared to lateral routing, while the bonding process itself is simplified by using standard bonding interfaces on each die face.
Data Source
AI summary
A semiconductor structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The second semiconductor die is bonded to the first bonding structure of the first semiconductor die. The first bonding structure includes a first dielectric layer, a second dielectric layer covering the first dielectric layer, and first conductors embedded in the first dielectric layer and the second dielectric layer, wherein each of the first conductors includes a first conductive barrier layer covering the first dielectric layer and a first conductive pillar disposed on the first conductive barrier layer, and the first conductive pillars are in contact with the second dielectric layer.