Stacked Die Package With Hybrid Bonded Capacitor Integration

The patent segments the interconnection structure into modular components including conductive patterns, vias, and capacitor structures that can be independently formed and stacked. This segmentation allows complex multi-device integration to be achieved through repeated modular stacking rather than creating entirely new interconnection paths for each device, thereby increasing integration density while managing complexity through standardization.

The patent transitions from planar 2D packaging to 3D vertical stacking by forming capacitors and interconnection structures in multiple layers above the semiconductor substrate. This dimensional change allows multiple devices to be integrated vertically, significantly increasing integration density while the standardized layering approach helps manage the complexity of interconnections.

The patent implements nested capacitor structures where conductive patterns and dielectric layers are stacked within each other in vertical layers. This nesting allows capacitors to achieve the required capacitance values in reduced planar area by utilizing vertical space, while the standardized layering process maintains manufacturing precision through repeated deposition and patterning steps.

The patent uses composite dielectric materials and conductive pattern structures that combine multiple materials with different properties to achieve the desired electrical characteristics in reduced area. The composite structures allow for optimized electrical performance while maintaining manufacturability through established material deposition and patterning processes.