Stacked Die Bonding After Edge Etching and Particle Removal
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Solution Overview
Problem
The challenge in microelectronic packaging is the accumulation of defects such as particles and shards on the edges of singulated dies, which can lead to unreliable bonding and electrical conductivity issues due to the brittleness of semiconductor wafers during cutting and singulation processes, causing voids and contamination in bonding interfaces.
Innovation Solution
The proposed solution involves etching the edges and surfaces of singulated dies using chemical or plasma etching methods, applying protective coatings, and using direct bonding techniques like ZIBOND or DBI hybrid bonding to create a smooth and clean bonding surface, reducing the presence of particles and shards, and ensuring reliable electrical conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If mechanical cutting or sawing is used to singulate dies, then productivity is improved, but particles and shards are generated on die edges causing bonding defects
Solution Approach 1:
The patent replaces mechanical cutting methods with laser cutting technology. The laser beam melts and vaporizes the semiconductor material to create precise cuts without mechanical contact, thereby eliminating the generation of particles and shards that would otherwise contaminate the die edges and bonding surfaces.
Solution Approach 2:
The patent employs an inert or controlled atmosphere during laser cutting to prevent oxidation and contamination of the die edges. By maintaining a clean cutting environment, the process minimizes the formation of harmful particles and residues on the singulated die surfaces.
2Object-generated harmful factors
If laser cutting is used to singulate dies, then particles generation is reduced, but surface roughness and edge quality may deteriorate
Solution Approach 1:
The patent applies preliminary surface preparation treatments before bonding, including chemical-mechanical polishing (CMP) or plasma treatment, to restore surface smoothness and remove any residual contaminants or roughness caused by the cutting process. This ensures the bonding surfaces meet the required precision standards.
Solution Approach 2:
The patent optimizes laser cutting parameters such as power, speed, and focal position to minimize thermal damage and surface roughness. By carefully controlling these parameters, the process achieves clean cuts with minimal impact on edge quality and surface smoothness.
3Reliability
If multiple cleaning processes are applied to remove particles, then purity is improved, but manufacturing complexity and time increase
Solution Approach 1:
The patent replaces multiple mechanical cleaning steps with a single plasma cleaning process. The plasma treatment effectively removes organic and inorganic contaminants, particles, and residues from the die surfaces in one step, achieving high cleanliness without the complexity of multiple sequential cleaning operations.
Solution Approach 2:
The patent utilizes the phase transition properties of plasma (from gas to reactive species) to achieve thorough cleaning. The plasma state enables effective removal of contaminants through chemical reactions and physical bombardment, providing superior cleaning efficiency in a single step compared to traditional liquid or vapor cleaning methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively removes defects and contaminants, enabling reliable bonding and improved electrical conductivity between dies, reducing manufacturing defects and stress in three-dimensional die stacks, and enhancing the efficiency and throughput of direct bond processes.
Implementation Method 1
etching the edges and surfaces of singulated dies using chemical or plasma etching methods
Implementation Method 2
etching the edges and surfaces of singulated dies using chemical or plasma etching methods
Implementation Method 3
bonding the singulated dies in a three-dimensional arrangement using direct bonding techniques
Implementation Method 4
non-adhesive techniques, such as a ZiBond® direct bonding technique
Implementation Method 5
non-adhesive techniques, such as a ZiBond® direct bonding technique or a DBI® hybrid bonding technique
Data Source
AI summary
Representative implementations of techniques and methods include processing singulated dies in preparation for bonding. A plurality of semiconductor die components may be singulated from a wafer component, the semiconductor die components each having a substantially planar surface. Particles and shards of material may be removed from edges of the plurality of semiconductor die component. Additionally, one or more of the plurality of semiconductor die components may be bonded to a prepared bonding surface, via the substantially planar surface.