Stacked Die Interconnect Layout for Dense 3D Semiconductor Bonding
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Solution Overview
Problem
The semiconductor industry faces physical limitations in two-dimensional integrated circuit formation due to increasing interconnection lengths and densities, necessitating new mechanisms for forming semiconductor structures.
Innovation Solution
A method involving the formation of conductive connectors and dummy connectors within a semiconductor structure, utilizing damascene techniques to create a more uniform pattern density and reduce the impact of test pads on real estate, while allowing electrical connections to semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If two-dimensional integrated circuit formation is used, then manufacturing simplicity is maintained, but integration density is limited due to physical constraints on interconnection length and pattern density
Solution Approach 1:
The patent transitions from two-dimensional to three-dimensional integrated circuit formation by stacking multiple tiers vertically. Conductive connectors extend through dielectric layers to establish electrical connections between stacked tiers, enabling increased integration density without proportionally increasing planar interconnection length. This vertical stacking approach allows more components to be integrated within a smaller footprint by utilizing the third dimension.
2Reliability
If conductive connectors are formed through conductive pads, then electrical connection is achieved, but pattern-loading effects increase and real estate is consumed
Solution Approach 1:
The conductive connector is formed by nesting multiple conductive portions within a single patterned conductive pad. The connector includes a first conductive portion extending through the pad and a second conductive portion embedded in the dielectric layer, both contained within the footprint of one pad. This nesting approach eliminates the need for separate pads for each connector, reducing the total area occupied by test pads while maintaining reliable electrical connections.
3Manufacturing precision
If uniform pattern density is achieved through damascene techniques, then manufacturing precision improves, but process complexity increases
Solution Approach 1:
The damascene process is segmented into distinct sequential steps: forming openings in the dielectric layer, depositing conductive material in the openings, and patternning the conductive material. This segmentation allows each step to be optimized independently, achieving uniform pattern density and precise alignment while maintaining manufacturing control. The segmented approach breaks down the complex damascene process into manageable stages that can be precisely controlled.
Data Source
AI summary
A semiconductor structure includes a stacked die including a lower portion and an upper portion stacked upon the lower portion. The lower portion includes a first patterned conductive pad, a first conductive connector passing through the first patterned conductive pad, a first patterned dielectric layer covering the first patterned conductive pad and laterally isolating the first conductive connector from the first patterned conductive pad. The upper portion includes a second conductive connector bonded to the first conductive connector, and a second patterned dielectric layer bonded to the first patterned dielectric layer.