Stacked Memory-Logic Die Interconnect Layout for 3D Routability

The patent divides the semiconductor device into separate memory dies and logic dies that are stacked vertically. Each die is independently fabricated and then bonded together, allowing high integration density while maintaining separate optimized designs for each function. The segmentation enables through-via connections to penetrate through multiple die layers, establishing reliable electrical pathways between stacked components.

The patent transitions from planar integration to three-dimensional stacked architecture. Memory dies and logic dies are arranged vertically in multiple layers, utilizing the vertical dimension to achieve high integration density. Through-vias extend vertically through the stacked structure, providing electrical connectivity across different layers without compromising routability within each die layer.

The semiconductor device is segmented into multiple chiplets including memory dies and logic dies that can be independently manufactured using existing fabrication processes. Each chiplet is fabricated separately on its own substrate, allowing compatibility with current manufacturing capabilities while enabling complex overall device functionality through the combination of multiple simpler components.

Multiple chiplets are nested vertically in a stacked configuration, with memory dies and logic dies arranged in layers. Smaller chiplets are positioned on top of larger substrates, creating a nested three-dimensional structure. Through-vias penetrate through the nested layers to establish electrical connections, managing structural complexity through organized vertical integration.