Stacked Die Polymer Buffer Structure for Corner Crack Mitigation

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Solution Overview

Problem

The semiconductor industry faces challenges in reducing corner crack propagation and non-bond stress during the manufacturing of integrated circuit packages, particularly in stacked die configurations, due to structural stresses.

Innovation Solution

The formation of buffer structures surrounding semiconductor dies using a polymer material with specific toughness and width, which is less brittle than the gapfill material, to absorb stress and reduce the risk of corner crack propagation and non-bond stress, combined with dielectric-to-dielectric and metal-to-metal bonding processes for enhanced integration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If gapfill material is used to fill spaces between semiconductor dies, then structural support is provided, but corner crack propagation and non-bond stress increase due to brittleness

Engineering Contradiction:

Improvestructural supportVSAvoidcorner crack propagation risk

Core Design Contradiction:

StrengthVSReliability

Solution Approach 1:

The patent changes the material parameter from brittle gapfill material to polymer buffer material with higher toughness. This parameter change transforms the mechanical properties of the buffer material, enabling it to absorb stress through deformation rather than fracturing, thereby reducing corner crack propagation while maintaining structural support capability

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite material system consisting of polymer buffer material combined with carrier substrate and semiconductor dies. The polymer material serves as a stress-absorbing intermediate layer that complements the rigid structural support of the carrier substrate, creating a composite structure that provides both support and crack resistance

Inventive Principle:

Principle #40Composite materials

2Quantity of substance

If stacked die configuration is implemented to increase integration density, then component density improves, but structural stress and corner crack risk increase

Engineering Contradiction:

Improveintegration densityVSAvoidstructural stress

Core Design Contradiction:

Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent applies beforehand cushioning by placing the polymer buffer material between the carrier substrate and semiconductor dies before stacking additional dies. This buffer material acts as a pre-positioned stress-absorbing layer that cushions subsequent structural stresses from the stacked configuration, preventing corner crack propagation while enabling high integration density

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Data Source

PatentUS20250022763A1Semiconductor Device and Methods of Manufacture

Publication Date: 2025.01.16 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

Semiconductor device and methods of manufacture are provided. In an embodiment, the a semiconductor device may include a first semiconductor die; an oxide layer on the first semiconductor die, wherein the first semiconductor die has a first top surface opposite the oxide layer; a first insulating material encapsulating the first semiconductor die and the oxide layer, wherein the first insulating material has a second top surface planar with the first top surface; and a first polymer buffer disposed between a sidewall of the first semiconductor die and a sidewall of the oxide layer, wherein the first polymer buffer has a third top surface planar with both the first top surface and the second top surface.