Stacked Die Power Rail Layout for Thermal and Routing Relief
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Solution Overview
Problem
Semiconductor devices with multiple dies in a single package face challenges in thermal regulation due to heat generation, leading to poor thermal dissipation and increased complexity in connectivity, which limits design flexibility and memory capacity.
Innovation Solution
A semiconductor device design with a spaced supply voltage and ground reference, featuring a stack of dies with gap fill and vertically spaced rails, allowing for additional routing schemes and improved thermal properties by enabling high heat-producing dies to be positioned at the top while maintaining adequate connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple dies are packaged in a single package, then device functionality and connectivity are improved, but thermal dissipation deteriorates due to heat generation
Solution Approach 1:
The patent transitions from planar die arrangement to vertical stacking architecture, utilizing the third dimension (height) to package multiple dies. This 3D configuration increases device functionality while managing thermal characteristics through vertical heat pathways and improved airflow channels around the stacked structure.
Solution Approach 2:
The patent divides the package into distinct functional segments with different dies stacked vertically, each serving specific functions. This segmentation allows independent thermal management for each die layer and enables targeted cooling strategies for high-power components while maintaining overall device functionality.
2Adaptability or versatility
If dies are densely packaged to increase connectivity, then device complexity is reduced, but routing complexity increases
Solution Approach 1:
The patent uses vertical vias and through-silicon vias (TSVs) to establish electrical connections between stacked dies, replacing complex lateral routing with straightforward vertical pathways. This dimensional transition simplifies the routing architecture by utilizing the vertical dimension for inter-die connectivity.
Solution Approach 2:
The patent introduces intermediary structures such as redistribution layers (RDLs) and buffer dies that facilitate simplified routing between functional dies. These intermediaries act as mediators that redistribute signals and reduce the complexity of direct point-to-point routing connections.
3Ease of operation
If high heat-producing dies are positioned for optimal connectivity, then connectivity is improved, but thermal dissipation deteriorates
Solution Approach 1:
The patent applies different quality characteristics to different regions of the stacked package. High heat-producing dies are positioned in locations with enhanced thermal dissipation properties, such as near heat sinks or in layers with improved thermal pathways. Each die layer receives customized thermal management based on its power characteristics while maintaining required connectivity.
Solution Approach 2:
The patent optimizes thermal dissipation by changing physical parameters such as die orientation, spacing between dies, and thermal interface materials. By adjusting these parameters, the system achieves both adequate connectivity and improved thermal management for high-power dies without compromising functional requirements.
Data Source
AI summary
A semiconductor device with a spaced supply voltage and ground reference is disclosed. A stack of semiconductor dies includes a first semiconductor die, one or more second semiconductor dies, and first and second contacts. A gap fill is disposed over a distal end of the one or more second semiconductor dies opposite the first semiconductor die. A first rail (e.g., supply voltage) is disposed at a distal end of the gap fill opposite the first semiconductor die, and a first via extends from the first rail to the first contact. A layer of dielectric material is disposed at least partially over the first rail. A second rail (e.g., ground reference) is disposed at the layer of dielectric material, and a second via extends from the second rail to the second contact. Third and fourth exposed contacts are coupled to the first and second rails, respectively.