Stacked Die TSV Timing Calibration for Reliable Signal Capture

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Solution Overview

Problem

The increased load on signal paths due to stacking multiple semiconductor dies in portable electronic devices limits the speed of signal transmission, leading to uncertain TSV delay times and potential performance deterioration.

Innovation Solution

A semiconductor device configuration that includes a reference die generating test signals and a target die receiving these signals through TSVs, with a comparison mechanism to determine optimal data transmission conditions by adjusting clock phases and delays to minimize errors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multiple semiconductor dies are stacked to increase integration, then circuit density is improved, but signal transmission speed deteriorates due to increased load on signal paths

Engineering Contradiction:
Improvecircuit densityVSAvoidsignal transmission speed
Core Design Contradiction:
Quantity of substanceVSSpeed

Solution Approach 1:

The patent applies parameter changes by adjusting clock phases and delay times to compensate for TSV-induced signal transmission variations. The system dynamically modifies timing parameters to maintain optimal signal integrity despite the increased load from stacked dies, thereby resolving the contradiction between high circuit density and signal transmission speed.

Inventive Principle:
Principle #35Parameter changes

2Adaptability or versatility

If multiple semiconductor dies are stacked, then integration capacity is improved, but TSV delay time becomes uncertain leading to performance deterioration

Engineering Contradiction:
Improveintegration capacityVSAvoidTSV delay time consistency
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent implements feedback mechanisms where the system measures actual signal transmission delays through TSVs and uses this information to adjust clock phases and timing parameters. This closed-loop approach compensates for uncertain TSV delay times, maintaining reliable performance despite variations introduced by stacked die configurations.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system dynamically adjusts clock phases and delay times based on measured TSV transmission characteristics. This dynamic adaptation allows the system to optimize signal timing in real-time, compensating for the uncertain and variable delay times introduced by the stacked die architecture, thereby maintaining reliability while achieving high integration capacity.

Inventive Principle:
Principle #15Dynamics

3Measurement precision

If clock phase adjustment is performed to minimize errors, then data transmission accuracy is improved, but device complexity increases

Engineering Contradiction:
Improvedata transmission accuracyVSAvoidclock adjustment mechanism
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent employs self-service mechanisms where the system automatically measures TSV delay times and adjusts its own clock phases without external intervention. The semiconductor device performs self-calibration by generating test signals, measuring transmission delays, and autonomously optimizing timing parameters, thereby improving data transmission accuracy while minimizing the complexity of external control mechanisms.

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS20250233029A1Semiconductor device and test method of the same
Publication Date: 2025.07.17 SAMSUNG ELECTRONICS CO LTD
  • US20250233029A1 patent drawing
  • US20250233029A1 patent drawing
  • US20250233029A1 patent drawing

AI summary

A semiconductor device according to some example embodiments comprises: a reference die configured to generate a test signal based on a first seed and transmit both an output clock signal and the test signal, and a target die configured to receive the output clock signal as an input clock signal though at least one through-silicon via TSV, capture the test signal as captured data based on the input clock signal, and compare a comparison pattern generated based on the first seed and the captured data.