Dielectric filter and communication device
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Solution Overview
Problem
Current TEM dielectric filters face challenges with size constraints, power capacity limitations, and poor low-end outband suppression performance, making it difficult to achieve miniaturization and improved radio frequency performance while maintaining effective capacitive coupling.
Innovation Solution
A dielectric filter design involving stacked dielectric blocks with specific metal layer configurations and resonance through holes that facilitate capacitive coupling, reducing size and enhancing power capacity while preventing signal leakage and improving outband suppression.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a stub type capacitive coupling structure is used in TEM dielectric filter, then capacitive coupling between resonance units is achieved, but power capacity is limited and breakdown occurs at high power
Solution Approach 1:
The patent transitions from a two-dimensional stub structure on the surface to a three-dimensional blind hole structure extending into the dielectric body. This dimensional change allows the coupling structure to be embedded within the dielectric material, increasing the spacing between conductive elements and thereby improving power capacity and breakdown resistance.
Solution Approach 2:
The coupling blind hole is nested within the dielectric body, with the coupling structure embedded inside the resonator housing. This nesting approach allows the coupling structure to be protected by the dielectric material, improving reliability and power handling capability while maintaining compact dimensions.
2Adaptability or versatility
If the depth of coupling blind hole is increased to achieve weak capacitive coupling, then coupling strength is reduced, but processing difficulty increases and reliability risk is caused
Solution Approach 1:
The patent applies local quality by varying the depth of different blind holes according to their specific coupling requirements. Each coupling blind hole can be optimized independently with appropriate depth, allowing precise control of coupling strength while maintaining manufacturability through localized rather than uniform design changes.
3Adaptability or versatility
If coupling hole depth is greater than blind hole depth in resonance unit, then capacitive coupling is achieved through polarity reversal, but low-end harmonic wave is introduced and outband suppression performance deteriorates
Solution Approach 1:
The patent changes the depth parameter of coupling blind holes to be equal to or less than the depth of blind holes in resonance units, rather than greater. This parameter adjustment eliminates the polarity reversal effect that generates low-end harmonic waves, thereby improving outband suppression performance while maintaining capacitive coupling capability through alternative design configurations.
4Ease of manufacture
If TEM dielectric filter structure is limited, then manufacturing is simplified, but cross coupling cannot be easily implemented and outband suppression performance is limited
Solution Approach 1:
The patent segments the filter structure into multiple resonator units, each with its own blind holes and coupling structures. This segmentation allows independent optimization of each unit while enabling cross-coupling between units through the blind hole structures, thereby improving outband suppression performance without significantly complicating the overall manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables miniaturization of the dielectric filter with improved radio frequency performance, increased power capacity, and effective outband suppression, addressing the limitations of existing TEM dielectric filters.
Implementation Method 1
Metal layers are disposed on an inner wall of the first blind hole 104, an inner wall of the first through hole 103, an inner wall of the second through hole 201, a first surface 1001 of the first dielectric block 100, and a second surface 2002 of the second dielectric block 200. The metal layer on the first surface 1001 of the first dielectric block 100 is opposite to the metal layer on the second surface 2002 of the second dielectric block 200, and the metal layer on the first surface 1001 of the first dielectric block 100 is connected to the metal layer on the second surface 2002 of the second dielectric block 200.
Implementation Method 2
When the dielectric filter operates, electromagnetic waves in a quasi-TEM mode in the resonance through holes generate an induced current on the first through hole 103, and the induced current moves from the first blind hole 104 to the second through hole 201 to form a loop.
Implementation Method 3
two or more resonance through holes 101 whose openings are located on the first surface 1001 of the first dielectric block 100; and a second through hole 201 whose opening is located on the second surface 2002 of the second dielectric block 200
Data Source
AI summary
Embodiments of this application disclose a dielectric filter and a communication device. In one example, the dielectric filter includes: a first dielectric block and a second dielectric block that are stacked up, where a first surface of the first dielectric block is opposite to a second surface of the second dielectric block; a first blind hole, a first through hole, and two or more resonance through holes whose openings are located on the first surface of the first dielectric block, and a second through hole whose opening is located on the second surface of the second dielectric block. A metal layer on the first surface of the first dielectric block is connected to a metal layer on the second surface of the second dielectric block.