Stacked Dielectric Waveguides for Multi-Frequency Chip Interconnects
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing integrated optical waveguides struggle to efficiently transmit signals at different frequencies and achieve high data transmission rates in integrated optical circuits due to limitations in signal confinement and guidance.
Innovation Solution
A semiconductor structure with multiple dielectric waveguide channels disposed in different layers, each with varying dielectric constants and thicknesses, separated by inter-level dielectric material, allows for the transmission of electromagnetic signals at different frequencies through transmitter and receiver coupling structures, enabling high-speed data transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single-layer optical waveguide is used, then the structure is simple, but the bandwidth and data transmission rate are limited
Solution Approach 1:
The patent transitions from a single-layer waveguide to a multi-layer stacked waveguide structure, adding the vertical dimension to the traditional planar waveguide. This dimensional expansion enables multiple independent signal channels to be transmitted simultaneously through different layers, thereby increasing bandwidth and data transmission rate without significantly complicating the overall device architecture.
Solution Approach 2:
The waveguide structure is segmented into multiple independent layers, each capable of carrying separate optical signals. This segmentation allows parallel transmission of multiple data streams through different layers, effectively multiplying the data transmission capacity while maintaining relatively simple individual layer designs.
2Productivity
If multiple waveguide layers are stacked, then bandwidth and data transmission rate increase, but manufacturing precision requirements increase
Solution Approach 1:
The patent combines multiple waveguide layers into a single integrated stacked structure that is formed and aligned as one unit during manufacturing. This merging approach allows the entire multi-layer assembly to be processed together, reducing the cumulative alignment errors that would occur if layers were separately fabricated and assembled, thereby lowering the overall manufacturing precision requirements.
Solution Approach 2:
The patent introduces intermediary coupling structures between adjacent waveguide layers that serve as alignment references and mechanical anchors. These intermediaries facilitate precise positioning of each layer relative to others during manufacturing, reducing the difficulty of achieving required alignment precision without compromising the high bandwidth performance.
3Reliability
If dielectric waveguides with varying dielectric constants are used, then signal confinement is improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by assigning different dielectric constants to specific regions and layers of the waveguide structure. Each layer is tailored with appropriate dielectric materials to optimize signal confinement for its specific function and position in the stack. This localized optimization improves overall signal confinement without requiring complete redesign of the entire waveguide system, thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor structure facilitates wide bandwidth electromagnetic radiation transmission, suitable for 5G communication, high-performance computing, and artificial intelligence applications, while optimizing manufacturing costs by utilizing dielectric waveguides with varying dielectric constants and thicknesses.
Implementation Method 1
Integrated optical waveguides are used to confine and guide light from a first point on an integrated chip (IC) to a second point on the IC with minimal attenuation
Data Source
AI summary
A method of forming a semiconductor structure includes: providing a first inter-level dielectric (ILD) layer overlying a molding layer, the molding layer including a transmitter ground structure and a receiver ground structure; forming first openings through the first ILD layer to expose the transmitter and receiver ground structures; forming first lower transmitter and receiver electrodes in the first openings to be respectively coupled to the transmitter and receiver ground structures; forming a first dielectric waveguide overlying the first ILD layer, and first lower transmitter and receiver electrodes; depositing a second ILD layer overlying the first dielectric waveguide; forming second lower transmitter and receiver electrodes extending through the second ILD and respectively coupled to the transmitter and receiver ground structures; and forming a second dielectric waveguide overlying the second ILD layer and the second lower transmitter and receiver electrodes.