Stacked Discrete Inductor for Semiconductor Power Devices
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor power devices with integrated inductors face challenges of high component cost and large form factor due to the need for separate substrates, lead-frames, and complex processing, which are costly and inefficient in terms of space usage.
Innovation Solution
A semiconductor power device with a stacked discrete inductor structure that eliminates the need for a separate substrate or lead-frame, using wire-wound or multi-layer spiral inductors with patterned electrodes for electrical connections, allowing for flip chip mounting or wire bonding of semiconductor components directly onto the inductor, thereby reducing assembly and packaging costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a separate substrate or lead-frame is used to support the inductor and semiconductor components, then the device can be assembled and connected, but the assembly and packaging costs increase
Solution Approach 1:
The patent combines the inductor and semiconductor components into a single integrated structure where the inductor substrate serves as both the inductor support and the mounting platform for semiconductor components. The leads wrap around the periphery to provide electrical connections, eliminating the need for separate substrate or lead-frame assemblies.
Solution Approach 2:
The inductor substrate performs multiple functions: it supports the inductor structure, provides mounting surfaces for semiconductor components, and serves as the electrical connection platform through its leads and surface contacts. This multi-functionality reduces the need for additional components and simplifies the overall assembly.
2Adaptability or versatility
If discrete inductors are co-packaged with power ICs in a 15mm×15mm×2.8mm package, then the components can be integrated, but the printed circuit board space is consumed
Solution Approach 1:
The patent merges the inductor and power IC into a single integrated assembly where the inductor substrate directly supports the semiconductor components. This integration allows the entire power conversion function to be mounted as one compact unit on the printed circuit board, significantly reducing the space required compared to discrete co-packaging.
3Reliability
If a large Power-IC die is used to support a MEMS inductor substrate, then high inductance and low resistance can be achieved, but the product cost increases
Solution Approach 1:
The patent segments the inductor and semiconductor components into separate but integrated units. The inductor is constructed with optimized winding structures and magnetic cores that achieve high inductance without requiring a large Power-IC die. The semiconductor components are mounted on the inductor substrate, allowing each component to be optimized independently for performance and cost.
Solution Approach 2:
The patent changes the inductor construction parameters by using traditional wire-wound or multi-layer spiral structures with optimized magnetic cores instead of MEMS-based planar structures. This allows achieving the desired inductance and resistance characteristics with smaller, more cost-effective components.
4Reliability
If planar magnetic layers and complex inductor structures are fabricated, then appropriate electrical characteristics can be achieved, but the processing complexity increases
Solution Approach 1:
The patent uses standard, well-established inductor construction techniques such as wire-winding and multi-layer spiral structures with conventional magnetic cores. These are mature, cost-effective technologies that achieve the required electrical characteristics without requiring complex planar magnetic layer fabrication processes.
Data Source
AI summary
A power device includes a discrete inductor having contacts formed on a first surface of the discrete inductor and at least one semiconductor component mounted on the first surface of the discrete inductor and coupled to the contacts. The discrete inductor further includes contacts formed on a second surface opposite the first surface and routing connections connecting the first surface contacts to corresponding second surface contacts. The semiconductor components may be flip chip mounted onto the discrete inductor contacts or wire bonded thereto.


