Stacked Electrode Films with Insulating Gaps for 3D Memory
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Solution Overview
Problem
In three-dimensional memory devices, the existing methods for forming gaps between electrode films are inefficient, leading to interference and threshold fluctuations due to capacitive coupling between adjacent cells, which affects the reliability and performance of the memory device.
Innovation Solution
The semiconductor device incorporates a stacked structure with insulating films made of metal oxide, silicon carbide, or silicon carbonitride materials between electrode films, which suppresses interference by creating gaps and ensures high-speed driving through capacitive coupling with the substrate, while also using sacrifice films that are selectively etched to form precise gaps between electrode films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gaps are provided between electrode films to reduce interference, then reliability is improved, but device complexity increases due to additional insulating films and manufacturing steps
Solution Approach 1:
The insulating films are nested within the stacked body structure, positioned between the electrode films and the substrate. This integration approach allows the insulating function to be incorporated without adding external components, thus improving reliability while minimizing increases in device complexity.
Solution Approach 2:
The stacked body is segmented into distinct functional layers including electrode films, insulating films, and substrate. This segmentation allows for precise control of interference between adjacent cells by positioning insulating films at specific locations, while maintaining a manageable structural organization.
2Manufacturing precision
If sacrifice films are selectively etched to form precise gaps, then manufacturing precision is improved, but productivity decreases due to additional etching steps
Solution Approach 1:
Sacrifice films are deposited and patterned in advance during the stacked body formation process, before the final electrode film deposition. This preliminary action allows for precise gap formation through selective etching, while the timing is optimized to avoid adding significant steps to the critical path of manufacturing.
Solution Approach 2:
Sacrifice films serve as intermediary elements that facilitate precise gap formation. These temporary structures are deposited, patterned, and then selectively removed through etching to create the desired gap geometry, enabling high manufacturing precision without requiring complex direct patterning methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the reliability and performance of three-dimensional memory devices by reducing interference between adjacent cells, improving data retention, and enabling high-speed operations by effectively managing capacitive coupling and precise gap formation between electrode films.
Implementation Method 1
This gap can be formed by removing a sacrifice film by etching
Data Source
AI summary
According to one embodiment, the electrode films are stacked with gaps interposed between the electrode films. The first insulating film is provided between a lowermost electrode film of the electrode films and the substrate and being a metal oxide film, a silicon carbide film, or a silicon carbonitride film. The second insulating film is provided on an uppermost electrode film of the electrode films and being a metal oxide film, a silicon carbide film, or a silicon carbonitride film. The stacked film includes a semiconductor film extending in a stacking direction of the stacked body in the stacked body, and a charge storage film provided between the semiconductor film and the electrode films.