Vertical Diode Structure for Stacked FET Area Scaling
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Solution Overview
Problem
There is a need for a diode that can be implemented in stacked FET technology, which requires a semiconductor structure with vertically stacked source/drain regions of opposite conductivity types electrically connected by a semiconductor material layer to facilitate current flow in a vertical direction.
Innovation Solution
A semiconductor structure with a stacked FET vertical diode is provided, featuring vertically stacked source/drain regions of opposite conductivity types connected by a semiconductor material layer, allowing current to flow vertically from a bottom source/drain region to a top source/drain region through the semiconductor material layer sandwiched between them.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If conventional passive devices are used in stacked FET technology, then device functionality is maintained, but area scaling is limited
Solution Approach 1:
The patent transitions from planar diode structures to vertically stacked FET-based diode structures, utilizing the vertical dimension to achieve area scaling while maintaining diode functionality through stacked source/drain regions of opposite conductivity types
Solution Approach 2:
The stacked FET structure serves multiple functions: it acts as both transistor switches and forms vertical diodes, eliminating the need for separate passive diode components and enabling area scaling in CMOS circuits
2Area of moving object
If vertically stacked source/drain regions are implemented, then area scaling is achieved, but electrical connection between regions becomes complex
Solution Approach 1:
A semiconductor material layer is introduced as an intermediary between the vertically stacked source/drain regions of opposite conductivity types, providing direct electrical connection and simplifying the overall structure while enabling area scaling
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient vertical current flow and supports the integration of diodes within stacked FET architectures, enhancing the scalability and performance of semiconductor devices.
Implementation Method 1
vertically stacked source/drain regions of opposite conductivity that are electrically connected by a semiconductor material layer positioned between the vertically stacked source/drain regions
Implementation Method 2
dielectric material layers to insulate source/drain regions in adjacent FETs
Data Source
AI summary
A semiconductor structure including a stacked FET vertical diode is provided. The stacked FET vertical diode includes vertically stacked source/drain regions of opposite conductivity that are electrically connected by a semiconductor material layer that is positioned between the vertically stacked source/drain regions.