Stacked HEMT Structure With Shared Electrodes for Higher Current Density
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing high electron mobility transistors (HEMTs) face challenges in increasing current density and reducing on-state resistivity without increasing device surface area or requiring complex resizing and manufacturing changes.
Innovation Solution
A parallel configuration of two HEMT transistors with shared source, drain, and gate electrodes, connected via an insulating layer, allowing for increased current density and reduced on-state resistivity without altering the transistor geometry.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a single HEMT transistor is used, then the device structure is simple, but the current density and power handling capability are limited
Solution Approach 1:
The patent combines two HEMT transistors into a single integrated device structure, merging their conduction paths in parallel between common source and drain electrodes. This merging approach doubles the current handling capability while maintaining a compact form factor, effectively resolving the contradiction between power capability and device complexity.
Solution Approach 2:
The patent utilizes vertical stacking of two HEMT transistors along the depth dimension rather than placing them side-by-side in the planar domain. This dimensional transition allows both transistors to be integrated within a compact footprint while their conduction paths are connected in parallel, achieving enhanced power capability without proportionally increasing the device area.
2Power
If the device surface area is increased to accommodate more transistors, then the current density increases, but the device footprint becomes larger
Solution Approach 1:
The patent transitions from a planar arrangement to a vertical stacked configuration, utilizing the third dimension (depth) to house multiple HEMT transistors. This allows the current density to be doubled by adding a second transistor without increasing the lateral footprint of the device, effectively resolving the area-power contradiction.
Solution Approach 2:
The patent implements a nested structure where one HEMT transistor is stacked directly on top of another, with shared source and drain electrodes extending through both devices. This nesting approach maximizes the use of vertical space, allowing higher current density within the same footprint by effectively 'nesting' the second transistor within the vertical profile of the first.
3Power
If HEMT transistors are resized to increase current capacity, then the manufacturing process becomes more complex, but the current density increases
Solution Approach 1:
The patent segments the current capacity enhancement into two separate, identical HEMT transistor units rather than attempting to scale up a single transistor. Each transistor maintains its original optimized dimensions and manufacturing specifications, avoiding the need to redesign or resize individual devices. The segmentation approach allows standard manufacturing processes to be applied to each unit independently.
Solution Approach 2:
The patent changes the architectural parameter from a single transistor to a dual-transistor parallel configuration, rather than changing the physical dimensions of individual transistors. This parameter change in system architecture achieves doubled current capacity while preserving the original transistor geometry and manufacturing parameters, thereby maintaining ease of manufacture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances current flow intensity and decreases on-state resistivity, enabling higher power applications without enlarging the device footprint.
Implementation Method 1
each comprise, from the interface, a barrier layer and a channel layer capable of forming a conduction layer in the form of a two-dimensional electron gas
Data Source
AI summary
The disclosure concerns an electronic device provided with two high electron mobility transistors stacked on each other and having in common their source, drain, and gate electrodes. For example, each of these electrodes extends perpendicularly to the two transistors. For example, the source and drain electrodes electrically contact the conduction channels of each of the transistors so that said channels are electrically connected in parallel.