Stacked IC Thermal Structure for Cooling Without Inductive Coupling
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Solution Overview
Problem
Integrated circuit devices in stacked configurations face thermal management challenges due to inefficient heat dissipation, leading to potential damage from excessive temperature, as conventional thermal management solutions are not effective for internally positioned devices and can cause inductive coupling issues.
Innovation Solution
A heat dissipation structure comprising a first thermally conductive structure with lower electrical conductivity, positioned proximate to integrated circuit devices and the substrate, and a second thermally conductive structure with higher electrical conductivity, disposed over the first structure, to effectively dissipate heat while minimizing inductive coupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a highly thermally conductive material is deposited over the stacked integrated circuit devices to improve heat dissipation, then the temperature of internally positioned devices is reduced, but inductive coupling between the integrated circuit devices increases
Solution Approach 1:
The heat dissipation device is segmented into multiple discrete thermally conductive structures positioned at different locations, rather than using a single continuous highly conductive layer. This segmentation maintains thermal management effectiveness while reducing the continuous conductive path that causes inductive coupling.
Solution Approach 2:
Different regions of the heat dissipation device have different electrical conductivity characteristics. The structure uses materials or configurations that provide high thermal conductivity where needed while having lower electrical conductivity to minimize inductive coupling, creating local quality variations in the material properties.
2Quantity of substance
If multiple integrated circuit devices are stacked to increase packaging density, then the packaging density is improved, but the thermal management effectiveness deteriorates due to isolation of internally positioned devices
Solution Approach 1:
The heat dissipation device extends in multiple dimensions to reach internally positioned devices. By adding vertical and lateral extensions, the thermal management solution accesses devices that are isolated in the conventional planar dimension, effectively cooling devices throughout the three-dimensional stacked structure.
Solution Approach 2:
The heat dissipation device is positioned within and around the stacked integrated circuit devices, with portions extending between and alongside the devices. This nested configuration allows the thermal management structure to be integrated within the compact stacked arrangement while maintaining effective thermal contact with internally positioned devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances thermal management by reducing inductive coupling and improving heat dissipation, thereby preventing damage to integrated circuit devices and maintaining performance.
Implementation Method 1
a first thermally conductive structure with a lower electrical conductivity than a electrical conductivity of a second thermally conductive structure disposed over the at least one first thermally conductive structure
Implementation Method 2
highly thermally conductive materials are generally highly electrically conductive, which can produce undesired inductive coupling between the integrated circuit devices
Data Source
AI summary
An integrated circuit assembly may be formed having a substrate, a first integrated circuit device electrically attached to the substrate, a second integrated circuit device electrically attached to the first integrated circuit device, and a heat dissipation device comprising at least one first thermally conductive structure proximate at least one of the first integrated circuit device, the second integrated circuit device, and the substrate; and a second thermally conductive structure disposed over the first thermally conductive structure(s), the first integrated circuit device, and the second integrated circuit device, wherein the first thermally conductive structure(s) have a lower electrical conductivity than an electrical conductivity of the second thermally conductive structure. The first thermally conductive structure(s) may be formed by an additive process or may be pre-formed and attached to at least one of the first integrated circuit device, the second integrated circuit device, and the substrate.


