Vertically Stacked IC Dies With Edge Coupling for Faster Signal Delivery

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Solution Overview

Problem

Current IC packaging architectures are limited in their ability to scale to next-generation servers due to bandwidth reduction, signal delay, and signal distortion, particularly when multiple processors are coupled together, and integrating voltage converters into vertically stacked IC dies is challenging due to limited footprint and extended power delivery distances.

Innovation Solution

The implementation of vertically stacked IC dies with lateral edge coupling and integrated voltage converters, where IC dies are serially connected to facilitate power delivery and reduce complexity, using oxide-oxide and metal-metal bonds for interconnects, and conductive traces and vias for efficient signal transmission.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If multiple processors are coupled together in current IC packaging architectures, then compute systems can be built, but bandwidth reduction, signal delay, and signal distortion occur

Engineering Contradiction:
Improvecompute system capabilityVSAvoidsignal quality
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent transitions from traditional 2D planar packaging to 3D vertically stacked packaging architecture. Multiple IC dies are stacked vertically with interconnects extending laterally from side surfaces, enabling processors to be coupled in the vertical dimension rather than only in-plane. This dimensional change reduces signal path lengths and improves bandwidth while maintaining signal quality.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Use of energy by moving object

If voltage converters are integrated into vertically stacked IC dies, then power delivery is improved, but footprint space is limited and power delivery distance is extended

Engineering Contradiction:
Improvepower delivery efficiencyVSAvoidfootprint space
Core Design Contradiction:
Use of energy by moving objectVSArea of stationary object

Solution Approach 1:

The patent places voltage converters on vertically stacked IC dies rather than in the same planar footprint, utilizing the vertical dimension for component placement. This allows voltage converters to be integrated into the 3D stack without consuming additional footprint area, while their strategic positioning optimizes power delivery distance and efficiency.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent uses intermediate connection structures including conductive traces, vias, and interconnects that extend laterally from the vertical stack to deliver power and signals. These intermediary structures enable efficient power delivery from voltage converters to processors without requiring extended trace lengths across the footprint.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Speed

If vertically stacked IC dies are implemented, then power delivery and signal speed are enhanced, but package complexity increases

Engineering Contradiction:
Improvesignal speedVSAvoidpackage structure
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The patent combines multiple IC dies, voltage converters, and interconnect structures into a single integrated 3D stacked package. This merging of components into one cohesive package structure, while increasing integration, manages complexity through systematic arrangement and standardized interconnect interfaces between stacked dies.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS20250210587A1Package architectures having vertically stacked dies and voltage domain stacking
Publication Date: 2025.06.26 INTEL CORP
  • US20250210587A1 patent drawing
  • US20250210587A1 patent drawing
  • US20250210587A1 patent drawing

AI summary

Embodiments of an integrated circuit (IC) die may include a substrate having a first surface with an array of first conductive pads, an opposite second surface, a third surface orthogonal to first and second surfaces, and through substrate vias (TSVs) electrically coupled to the array of first conductive pads; and a metallization stack having a fourth surface, an opposite fifth surface, and a sixth surface orthogonal to the fourth and fifth surfaces, and including a conductive trace parallel to the fourth and fifth surfaces and exposed at the sixth surface, and conductive vias between the fourth and fifth surfaces and exposed at the fifth surface, wherein the second surface of the substrate is coupled to the fourth surface of the metallization stack and an interface between the substrate and the metallization stack includes an array of second conductive pads electrically coupled to the conductive trace and conductive vias.