Thermal Dissipation Layer Structure for Stacked IC Heat Spreading
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Solution Overview
Problem
Semiconductor devices, particularly those in stacked die configurations, face challenges with thermal dissipation due to limited heat dissipation paths, which degrade device performance and are exacerbated by high temperatures.
Innovation Solution
Incorporation of thermal dissipation layers, such as diamond-like carbon, and bonding layers like AlN, to enhance thermal conductivity and planarity, facilitating effective heat dissipation through the semiconductor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are scaled down to reduce dimensions and improve production efficiency, then manufacturing cost decreases and productivity increases, but thermal dissipation capability deteriorates and device performance degrades
Solution Approach 1:
The patent introduces a thermal dissipation layer extending laterally beyond the active device area, utilizing the horizontal dimension for heat spreading. This lateral heat dissipation path complements the vertical heat flow, effectively increasing the thermal management capability without occupying additional vertical space, thus resolving the contradiction between device scaling and thermal dissipation.
Solution Approach 2:
The patent employs a thermal dissipation layer as an intermediary structure between the heat-generating active devices and the heat sink. This intermediate layer facilitates more efficient heat transfer by providing a dedicated thermal conduction path, thereby improving thermal dissipation capability while maintaining the scaled-down device dimensions.
2Adaptability or versatility
If multi-die stacked configuration is used to increase device functionality, then device complexity and functionality increase, but thermal dissipation paths are limited and heat removal becomes more difficult
Solution Approach 1:
The patent extends the thermal dissipation layer laterally beyond the vertical stack footprint, utilizing the horizontal plane for heat spreading. This creates additional thermal dissipation pathways in the lateral dimension, compensating for the limited vertical heat removal paths in multi-die stacked configurations.
Solution Approach 2:
The thermal dissipation layer is segmented to extend under and between multiple stacked dies, providing dedicated thermal pathways for each die. This segmentation allows independent heat management for each die in the stack, improving overall thermal dissipation while maintaining the multi-die functionality.
3Device complexity
If conventional semiconductor structures are used to maintain simplicity, then manufacturing complexity remains low, but thermal management performance is insufficient
Solution Approach 1:
The patent introduces a thermal dissipation layer as an intermediary structure that interfaces between the active devices and the heat sink. This additional layer, while increasing structural complexity, provides dedicated thermal conduction pathways that significantly improve heat removal efficiency and overall thermal management performance.
Solution Approach 2:
The thermal dissipation layer is formed from materials with high thermal conductivity, creating a composite structure that combines the functional active devices with a specialized thermal management component. This composite approach enables improved heat dissipation while maintaining the operational simplicity of the underlying device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides improved thermal management by increasing thermal conductivity and suitability for bonding, thereby enhancing the performance and reliability of semiconductor devices.
Implementation Method 1
Incorporation of thermal dissipation layers, such as diamond-like carbon, and bonding layers like AlN, to enhance thermal conductivity and planarity, facilitating effective heat dissipation through the semiconductor structure.
Data Source
AI summary
One aspect of the present disclosure pertains to an integrated circuit (IC) structure and method of fabricating thereof. The IC structure includes a transistor device formed on a substrate where the transistor device having source/drain (S/D) regions and a gate structure. A multi-layer interconnect (MLI) structure including metal lines and metal vias embedded in an intermetal dielectric (IMD) layer is formed over the substrate. And a thermal dissipation layer is formed having a surface with a plurality of peaks and valleys disposed over at least a portion of the MLI structure. A bonding layer is disposed over the thermal dissipation layer and covering the plurality of peaks and valleys.