Stacked IC Package Layout for Heat Dissipation and CTE Stability

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The semiconductor industry faces challenges in miniaturization and thermal management of integrated circuit packages due to increasing integration density and the need for smaller, more efficient packaging techniques, particularly in stacked semiconductor devices where thermal damage from coefficient of thermal expansion (CTE) mismatch can occur.

Innovation Solution

The solution involves direct bonding of integrated circuit dies to each other and embedding heat dissipation structures within the packages, using encapsulants and dummy dies with similar thermal expansion coefficients to prevent damage and enhance thermal management, while also forming connectors for electrical connections.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If integrated circuit dies are stacked to reduce physical size, then integration density and miniaturization are improved, but thermal management becomes more difficult and thermal damage from CTE mismatch occurs

Engineering Contradiction:
Improvephysical size of semiconductor deviceVSAvoidthermal management
Core Design Contradiction:
Volume of moving objectVSTemperature

Solution Approach 1:

The patent embeds heat dissipation structures (such as heat sinks or thermal vias) within the stacked die configuration, placing thermal management components inside the existing package structure rather than adding external components. This nested approach dissipates heat effectively while maintaining the compact form factor of the stacked device.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent employs materials with matched coefficients of thermal expansion (CTE) in the stacked die structure, using composite material layers that are specifically selected to have compatible thermal expansion properties. This prevents thermal damage from CTE mismatch while the composite structure provides enhanced thermal conduction pathways for heat dissipation.

Inventive Principle:
Principle #40Composite materials

2Volume of moving object

If integrated circuit dies are stacked to reduce physical size, then integration density is improved, but thermal damage from coefficient of thermal expansion (CTE) mismatch occurs

Engineering Contradiction:
Improvephysical size of semiconductor deviceVSAvoidthermal damage from CTE mismatch
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The patent modifies the thermal and mechanical parameters of the package structure by selecting materials with specific CTE values that match across die interfaces. The encapsulant and interposer materials are chosen to have CTE parameters that bridge the mismatch between different semiconductor dies, preventing thermal stress and reliability failures during temperature cycling.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs materials with matched coefficients of thermal expansion (CTE) in the stacked die structure, using composite material layers that are specifically selected to have compatible thermal expansion properties. This prevents thermal damage from CTE mismatch while the composite structure provides enhanced thermal conduction pathways for heat dissipation.

Inventive Principle:
Principle #40Composite materials

3Volume of moving object

If direct bonding of dies is used to create compact packages, then miniaturization is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvepackage sizeVSAvoidmanufacturing process complexity
Core Design Contradiction:
Volume of moving objectVSEase of manufacture

Solution Approach 1:

The patent performs preliminary bonding of dies to interposers or carrier substrates before final stacking, using temporary mounting structures that simplify the bonding process. Electrical connections and alignment features are established in advance during the preliminary bonding stage, reducing the complexity of the final stack assembly and enabling more straightforward manufacturing of the compact package.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for the creation of compact, thermally stable integrated circuit packages with improved heat dissipation, preventing thermal damage and enabling efficient electrical connectivity, thus addressing the challenges of miniaturization and thermal management in stacked semiconductor devices.

Implementation Method 1

embedding heat dissipation structures within the packages, using encapsulants and dummy dies with similar thermal expansion coefficients to prevent damage

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS11935802B2Integrated circuit package and method of forming same
Publication Date: 2024.03.19 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11935802B2 patent drawing
  • US11935802B2 patent drawing
  • US11935802B2 patent drawing

AI summary

A package and a method of forming the same are provided. The package includes: a die stack bonded to a carrier, the die stack including a first integrated circuit die, the first integrated circuit die being a farthest integrated circuit die of the die stack from the carrier, a front side of the first integrated circuit die facing the carrier; a die structure bonded to the die stack, the die structure including a second integrated circuit die, a backside of the first integrated circuit die being in physical contact with a backside of the second integrated circuit die, the backside of the first integrated circuit die being opposite the front side of the first integrated circuit die; a heat dissipation structure bonded to the die structure adjacent the die stack; and an encapsulant extending along sidewalls of the die stack and sidewalls of the heat dissipation structure.