Stacked IC Package Layout for Die Interface Stress Relief

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Solution Overview

Problem

The semiconductor industry faces challenges in reducing stress at the interface between integrated circuit dies in packaging, leading to issues like delamination and warpage due to differences in thermal expansion coefficients, especially when dies are closely aligned or overhang each other.

Innovation Solution

The implementation of a lateral offset between the sidewalls of upper and lower dies, along with the use of dielectric liners and gap-filling materials, helps to reduce stress and prevent delamination and warpage by ensuring the upper dies are disposed within and spaced apart from the boundary defined by the lower dies, and the use of conductive vias and bonding films for electrical coupling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If dies are closely aligned or overhang each other to improve integration density, then more components can be integrated into a given area, but stress at the interface increases leading to delamination and warpage

Engineering Contradiction:
Improveintegration densityVSAvoidinterface stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent introduces an intermediary structure (dielectric material filling the laterally offset space between dies) to mediate the interface between closely aligned dies. This intermediary reduces stress concentration at the die interface while maintaining high integration density, preventing delamination and warpage without sacrificing productivity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent employs asymmetric positioning of dies with lateral offset rather than perfect alignment or overhang. This asymmetric arrangement creates a controlled geometry where the second die is offset relative to the first die, reducing stress at the interface while still achieving high integration density through vertical stacking.

Inventive Principle:
Principle #4Asymmetry

2Reliability

If lateral offset is introduced between dies to reduce stress and prevent delamination, then interface stability improves, but manufacturing complexity increases

Engineering Contradiction:
Improveinterface stabilityVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent resolves the manufacturing complexity issue by transitioning from two-dimensional planar alignment to three-dimensional positioning with lateral offset. The dielectric material fills the laterally offset space, creating a stress-relief structure that improves interface stability while the offset geometry can be integrated into existing 3D packaging processes.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively reduces the likelihood of delamination and warpage in integrated circuit packages by managing stress at the interface and improving the structural integrity of the package, while also enhancing heat dissipation through the use of conductive vias and bonding films.

Implementation Method 1

The implementation of a lateral offset between the sidewalls of upper and lower dies, along with the use of dielectric liners and gap-filling materials, helps to reduce stress and prevent delamination and warpage

Methodology Applied
Scientific EffectStress distribution:

Implementation Method 2

enhancing heat dissipation through the use of conductive vias and bonding films

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20240304535A1Integrated Circuit Package and Methods of Forming the Same
Publication Date: 2024.09.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240304535A1 patent drawing
  • US20240304535A1 patent drawing
  • US20240304535A1 patent drawing

AI summary

A device includes: a first integrated circuit (IC) die; a first dielectric material around first sidewalls of the first IC die; a second IC die over and electrically coupled to the first IC die; and a second dielectric material over the first dielectric material and around second sidewalls of the second IC die, where in a top view, the second sidewalls of the second IC die are disposed within, and are spaced apart from, the first sidewalls of the first IC die.