3D Stacked IC Packages with Through-Silicon Vias
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Solution Overview
Problem
The semiconductor industry faces challenges in miniaturization and power consumption due to limitations in packaging techniques for semiconductor devices, particularly in achieving smaller footprints and lower latency while maintaining high integration density and efficiency.
Innovation Solution
The development of stacked semiconductor devices, such as 3D integrated circuits (3DICs), which involve stacking wafers/dies and interconnecting them using through vias, along with redistribution layers and various conductive features to reduce signal interconnect lengths and improve yield and cost-effectiveness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If traditional planar packaging techniques are used, then manufacturing process is simple, but device footprint is large and integration density is low
Solution Approach 1:
The patent transitions from traditional planar (2D) packaging to three-dimensional (3D) stacked packaging architecture. Multiple semiconductor dies are vertically stacked and interconnected through through-silicon vias (TSVs), enabling significant reduction in device footprint while achieving high integration density. The 3D stacking approach allows multiple functional layers to be integrated within a small horizontal area.
Solution Approach 2:
The patent implements nested packaging structures where smaller components and interconnect structures are integrated within larger package structures. Through-silicon vias penetrate through die layers, and redistribution layers are embedded within encapsulant material, creating a nested arrangement that maximizes space utilization and reduces overall package footprint.
2Use of energy by moving object
If signal interconnect lengths are reduced through stacking, then power consumption decreases and latency is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent divides the semiconductor device into multiple separate dies that are stacked vertically. Each die can be independently fabricated, tested, and processed, allowing for modular manufacturing. This segmentation enables parallel processing of multiple dies and simplifies the overall fabrication process despite the 3D architecture, as each die layer can be manufactured using standard planar processes before stacking.
3Manufacturing precision
If through vias are used to interconnect stacked dies, then integration density improves and footprint is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent forms through-silicon vias and fills them with conductive material before stacking the dies. This preliminary formation of interconnect structures ensures precise alignment and electrical connectivity between stacked dies. The TSVs are created and prepared in advance on each die, allowing for accurate registration during the stacking process and reducing alignment challenges during final assembly.
Data Source
AI summary
Packages and methods of manufacture thereof are described. A package may include a first package and a die structure disposed over the first package. The first package may include: a first encapsulant; a first via structure within the first encapsulant; a first die within the first encapsulant, at least a portion of the first encapsulant being interposed between a sidewall of the first die and a sidewall of the first via structure; a second die within the first encapsulant, an active side of the second die facing an active side of the first die; and a first via chip within the first encapsulant, the first via chip comprising one or more through vias, wherein the first via chip is disposed at the active side of the first die, and between the second die and the first via structure.