Stacked IC Thermal Conduction Structure for Dual-Die Heat Dissipation
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Solution Overview
Problem
Stacked integrated circuit devices, particularly in a package-on-package configuration, face heat accumulation issues due to thermal resistance from junctions and packages, limiting their operational performance.
Innovation Solution
A conductive structure is thermally connected to the top surfaces of stacked IC dies, providing thermal pathways that bypass junctions and intervening layers to enhance heat dissipation, using materials like copper or aluminum alloys.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a heat sink is attached to the top surface of the stack to dissipate heat, then heat dissipation from the top package is improved, but heat dissipation effectiveness from the bottom package is significantly reduced due to thermal resistance
Solution Approach 1:
The patent divides the thermal management system into separate segments: a first heat dissipation structure attached to the bottom package and a second heat dissipation structure attached to the top package. This segmentation allows each package to have its own dedicated heat dissipation path, eliminating the thermal resistance bottleneck that occurred when trying to dissipate heat from the bottom package through the top package.
Solution Approach 2:
The patent introduces a new dimensional approach by attaching heat dissipation structures to both the bottom and top surfaces of the stacked package assembly, rather than only to the top surface. This creates parallel thermal pathways in opposite directions, allowing heat to be dissipated simultaneously from both packages through their respective surfaces.
2Volume of moving object
If multiple devices are included in a stacked integrated circuit to utilize space efficiently, then space utilization is improved, but heat accumulation increases due to thermal resistance from junctions and packages
Solution Approach 1:
The patent segments the thermal management approach by providing separate heat dissipation structures for each die in the stacked configuration. The first heat dissipation structure is thermally coupled to the first die, and the second heat dissipation structure is thermally coupled to the second die, allowing independent heat management for each device layer.
Solution Approach 2:
The patent introduces intermediary thermal interface materials and conductive structures that facilitate heat transfer from each die to its corresponding heat dissipation structure. These intermediaries include thermal interface materials between the dies and the heat dissipation structures, enabling efficient heat extraction without requiring direct contact between adjacent dies.
3Device complexity
If traditional heat dissipation methods are used with stacked IC devices, then device complexity is kept low, but operational duration at full performance levels is limited due to heat accumulation
Solution Approach 1:
The patent merges the heat dissipation functions for multiple stacked dies into a unified system where heat dissipation structures are integrated with the package assembly. The conductive structures are configured to dissipate heat from both the first and second dies simultaneously, combining thermal management functions that would otherwise require separate implementations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The conductive structure effectively reduces thermal resistance, allowing stacked IC devices to operate at higher performance levels for extended durations while maintaining a small form factor and low cost.
Implementation Method 1
a conductive structure in thermal contact with a top surface of the first die and in thermal contact with a top surface of the second die. The conductive structure is configured to dissipate heat from the first die and the second die
Data Source
AI summary
An integrated device includes a first die and a second die stacked above the first die and electrically interconnected to the first die. The integrated device also includes a conductive structure in thermal contact with a top surface of the first die and in thermal contact with a top surface of the second die. The conductive structure is configured to dissipate heat from the first die and the second die.