Thermal Management for Stacked ICs Reducing Inductive Coupling

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Solution Overview

Problem

In integrated circuit devices, the increased density and power consumption lead to elevated junction temperatures, particularly in stacked configurations, where internal devices are poorly thermally managed due to inefficient thermal conductors and thermal cross-talk, risking damage or performance reduction.

Innovation Solution

A heat dissipation structure comprising a first thermally conductive structure with lower electrical conductivity, positioned proximate to integrated circuit devices and the substrate, and a second thermally conductive structure with higher conductivity, disposed over the first, to reduce inductive coupling and enhance heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If highly thermally conductive materials are deposited over stacked integrated circuit devices to improve heat dissipation, then thermal management is improved, but inductive coupling between devices increases due to high electrical conductivity

Engineering Contradiction:
Improveheat dissipationVSAvoidinductive coupling
Core Design Contradiction:
TemperatureVSObject-affected harmful factors

Solution Approach 1:

The patent employs composite thermal management structures combining materials with different thermal and electrical conductivity properties. Specifically, it uses thermally conductive but electrically resistive materials (such as diamond-like carbon, boron nitride, or composite materials with low electrical conductivity) to create heat dissipation layers that block inductive coupling while managing thermal loads between stacked integrated circuit devices.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent introduces intermediary thermal management layers between stacked integrated circuit devices that serve as mediators for heat transfer. These intermediate layers are designed with specific thermal and electrical properties to conduct heat away from the devices while simultaneously blocking electromagnetic fields and reducing inductive coupling through their electrical resistance.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If stacked integrated circuit devices are positioned in a compact configuration to increase packaging density, then device integration is improved, but thermal management deteriorates due to poor thermal conduction and thermal cross-talk

Engineering Contradiction:
Improvepackaging densityVSAvoidthermal management
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The patent utilizes composite thermal management structures with layered configurations that combine materials of varying thermal and electrical conductivity. These composite structures are integrated into the stacked device configuration to provide both mechanical support and thermal management functions, enabling efficient heat removal while maintaining compact packaging density.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent applies localized thermal management solutions at specific interfaces between stacked devices. Rather than uniform thermal management across the entire stack, the solution focuses on placing thermally conductive but electrically resistive materials at critical heat generation points and interfaces, providing targeted thermal management where needed while maintaining overall device performance.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Effectively manages heat in stacked integrated circuit devices, reducing the risk of damage and maintaining performance by minimizing inductive coupling and thermal throttling, while ensuring efficient heat removal.

Implementation Method 1

a first thermally conductive structure having a lower electrical conductivity than an electrical conductivity of a second thermally conductive structure disposed over the at least one first thermally conductive structure

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

heat dissipation device comprising at least one first thermally conductive structure in thermal contact with at least one of the first integrated circuit device, the second integrated circuit device, and the substrate

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 3

a second thermally conductive structure disposed over the at least one first thermally conductive structure

Methodology Applied
Scientific EffectConvection: Convection

Implementation Method 4

a first thermally conductive structure having a lower electrical conductivity than an electrical conductivity of a second thermally conductive structure

Methodology Applied
Scientific EffectElectrical resistance: Electrical Resistance

Data Source

PatentUS11621208B2Thermal management solutions that reduce inductive coupling between stacked integrated circuit devices
Publication Date: 2023.04.04 INTEL CORP
  • US11621208B2 patent drawing
  • US11621208B2 patent drawing
  • US11621208B2 patent drawing

AI summary

An integrated circuit assembly may be formed having a substrate, a first integrated circuit device electrically attached to the substrate, a second integrated circuit device electrically attached to the first integrated circuit device, and a heat dissipation device comprising at least one first thermally conductive structure proximate at least one of the first integrated circuit device, the second integrated circuit device, and the substrate; and a second thermally conductive structure disposed over the first thermally conductive structure(s), the first integrated circuit device, and the second integrated circuit device, wherein the first thermally conductive structure(s) have a lower electrical conductivity than an electrical conductivity of the second thermally conductive structure. The first thermally conductive structure(s) may be formed by an additive process or may be pre-formed and attached to at least one of the first integrated circuit device, the second integrated circuit device, and the substrate.