Stacked IC Redistribution Lines With Through-Wafer Conductive Plugs

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Solution Overview

Problem

The challenge in semiconductor manufacturing is to achieve higher integration density, smaller form factors, and lower power consumption while maintaining effective electrical connectivity between stacked semiconductor wafers.

Innovation Solution

The formation of continuous conductive plugs and redistribution lines (RDLs) that penetrate through semiconductor wafers, providing direct electrical connections between stacked chips, reducing the physical size and power consumption, and minimizing parasitic interference.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional bonding techniques are used to bond semiconductor wafers, then the wafers can be connected, but the electrical connectivity and signal routing between stacked wafers become complex and less efficient

Engineering Contradiction:
Improveelectrical connectivityVSAvoidsignal routing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent transitions from planar signal routing to three-dimensional vertical routing by forming conductive plugs that extend through dielectric layers and metal layers in the vertical dimension. This allows direct electrical connections between stacked semiconductor wafers, reducing routing complexity while improving connectivity reliability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent implements a nested interconnect structure where conductive plugs are embedded within dielectric layers and metal layers, which are themselves nested within the semiconductor wafer stack. This nested arrangement enables efficient vertical signal routing through multiple layers while maintaining compact packaging.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Quantity of substance

If more components are integrated into a given area by reducing minimum feature size, then integration density improves, but manufacturing complexity and power consumption increase

Engineering Contradiction:
Improveintegration densityVSAvoidpower consumption
Core Design Contradiction:
Quantity of substanceVSUse of energy by moving object

Solution Approach 1:

The patent moves from two-dimensional lateral integration to three-dimensional vertical integration by stacking semiconductor wafers and providing direct vertical electrical connections through conductive plugs. This reduces the need for extensive lateral routing, thereby reducing power consumption while maintaining high integration density.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Volume of moving object

If stacked semiconductor wafers are bonded together to reduce form factor, then device size decreases, but ensuring effective electrical connectivity between wafers becomes more challenging

Engineering Contradiction:
Improveform factorVSAvoidelectrical connectivity
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The patent forms conductive plugs and establishes electrical interconnections between stacked wafers before final packaging. This preliminary action ensures reliable electrical connectivity is established while the wafers are still accessible, facilitating effective bonding and connection in the stacked configuration.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent replaces mechanical wire bonding or tab connections with direct conductive plug connections formed through the dielectric and metal layers. This substitution provides more reliable and compact electrical connectivity between stacked wafers, enabling reduced form factor while maintaining connection integrity.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Data Source

PatentUS12482791B2Stacked integrated circuits with redistribution lines
Publication Date: 2025.11.25 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12482791B2 patent drawing
  • US12482791B2 patent drawing
  • US12482791B2 patent drawing

AI summary

A method includes bonding a first wafer to a second wafer, with a first plurality of dielectric layers in the first wafer and a second plurality of dielectric layers in the second wafer bonded between a first substrate of the first wafer and a second substrate in the second wafer. A first opening is formed in the first substrate, and the first plurality of dielectric layers and the second wafer are etched through the first opening to form a second opening. A metal pad in the second plurality of dielectric layers is exposed to the second opening. A conductive plug is formed extending into the first and the second openings.