Vertically Stacked IC Dies With Voltage Domain Stacking

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Solution Overview

Problem

Current packaging architectures for integrated circuits (ICs) in Multi-Chip Modules (MCMs) are limited in their ability to scale to next-generation servers due to bandwidth reduction, signal delay, and signal distortion, particularly when dealing with high-speed signal speeds and data rates, and face challenges in power delivery to vertically stacked IC dies with dense power circuitry.

Innovation Solution

The implementation of vertically stacked IC dies with lateral edges, coupled through a voltage converter, using interconnects that allow for serial power delivery and reduced current requirements, enabling efficient power delivery and signal speed while minimizing package complexity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If conventional packaging architectures are used for vertically stacked IC dies, then power delivery is challenging, but device complexity increases

Engineering Contradiction:
Improvepower deliveryVSAvoidpackage complexity
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The patent transitions from traditional planar power delivery to three-dimensional voltage domain stacking, where multiple voltage domains are stacked vertically. This allows power delivery to scale with the stacked architecture while maintaining manageable complexity through systematic organization of voltage domains across multiple layers.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent divides the power delivery system into multiple independent voltage domains, each serving specific functional blocks. This segmentation allows independent optimization of power delivery to different regions and reduces the complexity of managing power across the entire stacked structure by breaking it into manageable domains.

Inventive Principle:
Principle #1Segmentation

2Speed

If vertically stacked IC dies are implemented, then signal speed should improve, but bandwidth reduction and signal distortion occur

Engineering Contradiction:
Improvesignal speedVSAvoidsignal quality
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent introduces intermediate voltage domains and buffer structures between stacked dies to mediate signal transmission. These intermediaries help maintain signal integrity by providing controlled impedance transitions and reducing reflections, thereby preventing bandwidth reduction and signal distortion while preserving the speed benefits of vertical stacking.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Power

If current power delivery methods are used for vertically stacked dies, then current requirements increase, but power delivery efficiency decreases

Engineering Contradiction:
Improvepower delivery efficiencyVSAvoidcurrent requirements
Core Design Contradiction:
PowerVSQuantity of substance

Solution Approach 1:

The patent changes the voltage parameter across different stacked layers, implementing higher voltage domains at certain levels and lower voltage domains at others. This parameter change allows power delivery to be optimized for each layer's specific requirements, reducing overall current requirements while improving power delivery efficiency through matched impedance and reduced resistive losses.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentEP4576193A1Package architectures having vertically stacked dies and voltage domain stacking
Publication Date: 2025.06.25 INTEL CORP
  • EP4576193A1 patent drawingFigure 1~2
  • EP4576193A1 patent drawingFigure 3A~3B
  • EP4576193A1 patent drawingFigure 3C~3D

AI summary

Embodiments of an integrated circuit (IC) die may include a substrate having a first surface with an array of first conductive pads, an opposite second surface, a third surface orthogonal to first and second surfaces, and through substrate vias (TSVs) electrically coupled to the array of first conductive pads; and a metallization stack having a fourth surface, an opposite fifth surface, and a sixth surface orthogonal to the fourth and fifth surfaces, and including a conductive trace parallel to the fourth and fifth surfaces and exposed at the sixth surface, and conductive vias between the fourth and fifth surfaces and exposed at the fifth surface, wherein the second surface of the substrate is coupled to the fourth surface of the metallization stack and an interface between the substrate and the metallization stack includes an array of second conductive pads electrically coupled to the conductive trace and conductive vias.