Stacked IGBT and Diode Module for Compact Power Design
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Solution Overview
Problem
Power semiconductor devices, such as IGBTs, face challenges with large module sizes due to the need for multiple substrates and wiring to accommodate IGBT and diode chips in a co-planar configuration, leading to inefficiencies in size and thermal management.
Innovation Solution
A semiconductor device module with a stacked configuration of IGBT and freewheeling diode dies on a substrate, where the freewheeling diode die is directly bonded over the IGBT die, reducing the overall substrate area required and enhancing thermal management through improved electrical and thermal connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If IGBT and diode chips are arranged in a co-planar configuration on substrates, then the devices can be properly connected with wiring, but the module size becomes unduly large to accommodate all chips and wiring
Solution Approach 1:
The patent transitions from a two-dimensional co-planar arrangement to a three-dimensional stacked configuration. Multiple IGBT and diode chips are vertically stacked on top of each other on the substrate, utilizing the vertical dimension to reduce the horizontal footprint. This stacking approach maintains all necessary electrical connections while significantly reducing the overall module area.
Solution Approach 2:
The patent merges multiple chip layers into a single vertical stack, combining IGBT chips and diode chips in alternating layers. This consolidation integrates what would traditionally require separate substrate areas into a unified vertical structure, eliminating wasted space and reducing the total module dimensions.
2Quantity of substance
If multiple substrates are used to accommodate the required number of power semiconductor devices, then the device count is sufficient, but the overall module size increases
Solution Approach 1:
Instead of expanding horizontally with multiple substrates, the patent stacks multiple device layers vertically on a single substrate. This vertical integration allows the module to accommodate the required number of power semiconductor devices while maintaining a compact footprint, as the z-dimension (height) is utilized rather than the x-y plane.
Solution Approach 2:
The patent implements a nested structure where multiple chip layers are embedded within a single substrate package. Each layer of IGBT and diode chips is nested vertically within the same substrate boundary, creating a space-efficient configuration that maximizes device density without increasing module area.
3Reliability
If freewheeling diode is properly positioned to manage energy collapse, then voltage spikes are minimized and reliability is improved, but the configuration complexity increases
Solution Approach 1:
The patent positions the freewheeling diode chips in vertical layers adjacent to or overlapping with IGBT chips in the stack. This three-dimensional positioning optimizes the electrical connection paths for energy collapse management while maintaining a regular, repeatable stacking pattern that does not significantly increase manufacturing complexity.
Solution Approach 2:
The patent segments the module into repeating vertical units, each containing IGBT and diode chip pairs stacked together. This modular segmentation creates a predictable, systematic configuration that simplifies the overall design and manufacturing process, as each segment follows the same pattern and can be replicated throughout the module.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The stacked configuration results in a more compact module design with reduced thermal stress and improved reliability, as the freewheeling diode directly manages energy collapse, minimizing voltage spikes and enhancing longevity.
Implementation Method 1
the collapse of the energy stored, for example, in a coil, causes a current to flow through the freewheel diode
Implementation Method 2
enhancing thermal management through improved electrical and thermal connectivity
Data Source
AI summary
A semiconductor device module. The semiconductor device module may include a first substrate; and a semiconductor die assembly, disposed on the first substrate. The semiconductor die assembly may include a first semiconductor die, bonded to the first substrate; a second semiconductor die, disposed over the first semiconductor die; and an electrical connector, disposed between the first semiconductor die and the second semiconductor die, wherein the semiconductor die assembly comprises an insulated gate bipolar transistor (IGBT) die and a freewheeling diode die.