Stacked Image Sensor Memory Layout for Simpler Manufacturing
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Solution Overview
Problem
The existing manufacturing method for stacked-layer imaging devices is complex, requiring multiple attaching and thinning steps, making it difficult to increase storage capacity and incorporating a memory device with high heat resistance.
Innovation Solution
A stacked-layer imaging device structure with a signal processing circuit, memory device, and image sensor, where the memory device uses OS transistors with a metal oxide in the channel formation region, reducing the number of manufacturing steps and enhancing heat resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a stacked-layer structure with multiple semiconductor chips is used, then the functionality and integration of the imaging device are improved, but the manufacturing complexity increases due to multiple attaching and thinning steps
Solution Approach 1:
The patent combines the signal processing circuit and memory device into a single semiconductor chip, eliminating the need for separate attaching steps between multiple chips. This merging approach maintains the functional integration benefits while significantly reducing manufacturing complexity by simplifying the stacking process to fewer attachment and thinning operations.
2Ease of manufacture
If conventional transistors are used in the memory device, then the manufacturing process is simpler, but the heat resistance and reliability are insufficient
Solution Approach 1:
The patent changes the material parameter of the transistor from conventional semiconductor materials to oxide semiconductor materials. This material substitution provides superior heat resistance and reliability for the memory device while maintaining compatibility with existing manufacturing processes, as oxide semiconductors can be processed using similar fabrication techniques but offer enhanced thermal stability.
3Quantity of substance
If the number of stacked memory devices is increased, then the storage capacity is improved, but the manufacturing complexity and difficulty of increasing storage capacity increase
Solution Approach 1:
The patent designs a unified semiconductor chip structure that can accommodate multiple memory devices with standardized interfaces and processes. This universal design allows storage capacity to be increased by simply adding more memory devices using the same manufacturing流程, without increasing complexity. The consistent structure enables scalable production where additional memory devices can be integrated following identical attachment and thinning steps.
Data Source
AI summary
An imaging device which has a stacked-layer structure and can be manufactured easily is provided. The imaging device includes a signal processing circuit, a memory device, and an image sensor. The imaging device has a stacked-layer structure in which the memory device is provided above the signal processing circuit, and the image sensor is provided above the memory device. The signal processing circuit includes a transistor formed on a first semiconductor substrate, the memory device includes a transistor including a metal oxide in a channel formation region, and the image sensor includes a transistor formed on a second semiconductor substrate.