3D Stacked Image Sensor Pixels for Sensitivity

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Solution Overview

Problem

As CMOS image sensors have become smaller, their sensitivity has decreased due to the reduction in size of photo-electric conversion elements, leading to lower photo sensitivity.

Innovation Solution

The design includes multiple pixels with photoelectric conversion elements at different depths in a semiconductor substrate, where some elements are partially overlapped to increase the effective size and sensitivity, and sharing of floating diffusion nodes to enhance charge transfer efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the pixel size is reduced to make the CMOS image sensor smaller, then the device size is reduced, but the sensitivity of the photoelectric conversion element decreases

Engineering Contradiction:
Improvedevice sizeVSAvoidsensitivity
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The patent transitions from two-dimensional planar photoelectric conversion elements to three-dimensional vertically stacked photoelectric conversion elements at different depths. This allows multiple conversion elements to occupy the same horizontal footprint while increasing total light capture volume, thereby maintaining sensitivity while reducing device area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent implements nested photoelectric conversion elements where deeper elements are positioned within the vertical projection of upper elements. This nesting arrangement allows multiple conversion elements to share the same horizontal space at different depths, effectively increasing the total photoelectric conversion area without increasing the device footprint.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Reliability

If multiple photoelectric conversion elements are stacked vertically to increase sensitivity, then the sensitivity improves, but the device complexity increases

Engineering Contradiction:
ImprovesensitivityVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent divides the photoelectric conversion function into multiple segmented elements positioned at different depths, each responsible for converting light to electrical signals. This segmentation allows the system to maintain high sensitivity through multiple conversion elements while managing complexity by distributing the conversion function across discrete, modular units.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent creates multi-functional pixel structures where each pixel contains multiple photoelectric conversion elements that can collectively perform light detection across different intensities and wavelengths. This universality allows a single pixel structure to handle various lighting conditions, reducing the need for separate specialized components and thereby managing overall system complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the sensitivity and full-well capacity of the image sensor, improving its performance without the light loss associated with color filters, thereby addressing the sensitivity decline in smaller pixel sizes.

Implementation Method 1

the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Data Source

PatentUS9380242B2Image sensor and devices having the same
Publication Date: 2016.06.28 SAMSUNG ELECTRONICS CO LTD
  • US9380242B2 patent drawing
  • US9380242B2 patent drawing
  • US9380242B2 patent drawing

AI summary

An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.