Stacked Image Sensor Storage Devices for High Frame Rate Capture
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Solution Overview
Problem
Conventional high-frame-rate image capture techniques degrade image quality due to the large area required for storage devices, reducing the number of pixels that can be arranged and affecting photodiode saturation characteristics.
Innovation Solution
An image sensor with a first semiconductor substrate for photoelectric conversion elements and a second substrate for storage devices, connected via connection units, allowing for accumulation and readout of pixel signals in multiple stages without reducing the photodiode area, enabling high-frame-rate image capture while maintaining image quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If many storage devices are provided for each pixel to achieve high frame rate capture, then the frame rate is improved, but the pixel area becomes large and the number of arrangeable pixels decreases
Solution Approach 1:
The patent applies dimensionality change by stacking storage devices vertically above photodiodes in a three-dimensional configuration. This allows multiple storage devices to share the same lateral footprint area, enabling high frame rate capture with multiple storage layers while maintaining a compact pixel area and accommodating more pixels in the same sensor footprint.
Solution Approach 2:
The patent implements nesting by placing storage devices directly above photodiodes in a vertical stack configuration. The storage devices are nested in the vertical dimension above the photodiode layer, allowing multiple storage functions to be integrated within the same lateral space without increasing the pixel area.
2Productivity
If many storage devices are provided for each pixel to achieve high frame rate capture, then the frame rate is improved, but the photodiode area becomes small and saturation characteristics decrease
Solution Approach 1:
By transitioning to a three-dimensional stacked architecture, the patent enables multiple storage devices to be positioned vertically above the photodiode without encroaching on the photodiode's lateral area. This maintains adequate photodiode area for good saturation characteristics while achieving high frame rate through multiple storage layers.
Solution Approach 2:
The patent segments the storage function into multiple separate storage devices stacked vertically, each capable of independently storing pixel signals. This segmentation allows the storage capacity to be increased for high frame rate capture without requiring additional lateral space that would reduce photodiode area.
3Productivity
If many storage devices are provided for each pixel to achieve high frame rate capture, then the frame rate is improved, but the device complexity increases
Solution Approach 1:
The stacked storage devices share common readout circuitry and control mechanisms, allowing multiple storage layers to be managed through unified control logic. This multi-functionality approach enables high frame rate capture with multiple storage devices while minimizing the increase in overall device complexity through shared resources.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for high-frame-rate image capture with improved image quality by efficiently storing and reading out pixel signals, maintaining photodiode area and saturation characteristics.
Implementation Method 1
a first semiconductor substrate on which a plurality of photoelectric conversion elements are arranged
Data Source
AI summary
An image sensor comprises a first semiconductor substrate on which a plurality of photoelectric conversion elements are arranged, a second semiconductor substrate on which a plurality of storage devices each for storing pixel signals are arranged; and a plurality of connection units configured to electrically connect the photodiodes and the storage devices, wherein the plurality of storage devices are arranged in correspondence with the plurality of photoelectric conversion elements.