Stacked Imaging Element Layout to Prevent Charge Blooming

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Solution Overview

Problem

In imaging elements with a stacked configuration, charge generated by photoelectric conversion can flow into adjacent elements, leading to blooming and degradation of image quality.

Innovation Solution

Incorporating a charge storage electrode separated from the first electrode by an insulating layer, with a potential difference that attracts charges strongly to the storage region, preventing flow into adjacent elements, and using a charge movement control electrode to control the electric field and potential.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a stacked configuration with photoelectric conversion units is used, then color imaging capability is improved, but charge may flow into adjacent elements causing blooming

Engineering Contradiction:
Improvecolor imaging capabilityVSAvoidcharge blooming
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The photoelectric conversion layer is divided into multiple independent photoelectric conversion units, each with its own charge storage electrode and insulating layer. This segmentation isolates charge carriers within each unit, preventing charge blooming between adjacent elements while maintaining color imaging capability through the stacked configuration of multiple units sensitive to different wavelengths.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

An insulating layer is introduced as an intermediary between the photoelectric conversion layer and the charge storage electrode. This insulating layer acts as a barrier that prevents charge from flowing into adjacent elements, thereby suppressing blooming while still allowing the stacked configuration to function for color imaging.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If a charge storage electrode is added to prevent blooming, then image quality is improved, but device complexity increases

Engineering Contradiction:
Improveimage qualityVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The charge storage electrode serves multiple functions: it stores photoelectrically generated charge, prevents charge blooming to adjacent elements, and maintains the electric field necessary for charge collection. This multi-functionality improves image quality without proportionally increasing device complexity, as a single component achieves multiple objectives.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The charge storage electrode is positioned beneath the photoelectric conversion layer, creating a nested structure where the charge storage function is integrated within the existing photoelectric conversion unit architecture. This nesting approach adds the necessary charge storage capability while minimizing additional structural complexity.

Inventive Principle:
Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively suppresses kTC noise and prevents charge blooming, maintaining image quality by ensuring charges are stored and transferred efficiently within the intended pixel.

Implementation Method 1

a photoelectric conversion layer (313) including an organic material... The first photoelectric conversion unit 311 photoelectrically converts, for example, green light

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Data Source

PatentEP3644602B1Imaging element, laminated imaging element, and solid-state imaging device
Publication Date: 2023.12.20 SONY SEMICON SOLUTIONS CORP
  • EP3644602B1 patent drawingFigure 1A~1B
  • EP3644602B1 patent drawingFigure 2
  • EP3644602B1 patent drawingFigure 3

AI summary

An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.