Stacked Imaging Element Structure for Efficient Charge Transfer
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Solution Overview
Problem
Conventional stacked imaging elements face challenges in simplifying configuration and structure while achieving excellent charge transfer characteristics, with complexities in manufacturing and material composition, particularly in the semiconductor layer's mobility and energy level relation with the photoelectric conversion layer.
Innovation Solution
The implementation of an imaging element with a photoelectric conversion unit comprising an inorganic oxide semiconductor material layer made of indium, tin, titanium, and zinc atoms, with specific atomic percentages and oxygen deficiency energy above 4 eV, enhancing charge transfer efficiency by optimizing mobility and energy levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor layer structure is used in stacked imaging elements, then charge accumulation and transfer can be achieved, but the manufacturing process becomes complex and material composition requirements become stringent
Solution Approach 1:
The patent employs a composite material structure consisting of an inorganic oxide semiconductor layer (containing In, Sn, Ti, Zn atoms) combined with an organic photoelectric conversion layer. This composite approach enables excellent charge transfer characteristics while simplifying the overall device structure and manufacturing process, resolving the contradiction between reliability and device complexity
Solution Approach 2:
The patent optimizes specific parameters of the inorganic oxide semiconductor layer including atomic percentages (In: 30-70%, Sn: 5-30%, Ti: 5-30%, Zn: 5-30%) and oxygen deficiency energy (≥4 eV). These parameter changes enable high mobility and appropriate energy levels for efficient charge transfer, achieving reliable charge transfer characteristics without complex device structures
2Reliability
If the semiconductor layer mobility is increased to improve charge transfer, then charge transfer efficiency improves, but material composition requirements become more stringent
Solution Approach 1:
The patent uses a composite inorganic oxide semiconductor material containing multiple metal atoms (In, Sn, Ti, Zn) in specific proportions. This composite material achieves high mobility (10^-6 to 10^-3 cm²/Vs) while maintaining manageable manufacturing precision requirements through the synergistic effects of different metal atoms
Solution Approach 2:
The patent specifies optimal parameter ranges for the inorganic oxide semiconductor layer: atomic percentages of In (30-70%), Sn (5-30%), Ti (5-30%), Zn (5-30%), and oxygen deficiency energy (≥4 eV). These parameter optimizations enable high charge transfer efficiency while keeping manufacturing precision requirements within practical limits
3Adaptability or versatility
If organic photoelectric conversion material is used to achieve specific wavelength conversion, then color-specific photoelectric conversion is enabled, but charge transfer to the semiconductor layer becomes challenging
Solution Approach 1:
The patent optimizes the energy level parameters of the inorganic oxide semiconductor layer, specifically setting oxygen deficiency energy ≥4 eV and controlling the conduction band minimum to achieve appropriate energy level alignment with the organic photoelectric conversion layer. This enables efficient charge transfer from the organic layer to the inorganic oxide semiconductor layer
Solution Approach 2:
The patent creates a composite structure where an organic photoelectric conversion layer (with specific wavelength selectivity) is combined with an inorganic oxide semiconductor layer (with high mobility and appropriate energy levels). This composite approach simultaneously achieves wavelength-specific photoelectric conversion and reliable charge transfer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration results in improved charge transfer characteristics, simplifying the imaging element's structure and manufacturing process, leading to enhanced imaging quality by reducing random noise and kTC noise-related issues.
Implementation Method 1
a photoelectric conversion unit formed in contact with the first electrode and above the charge accumulation electrode with an insulation layer interposed between the photoelectric conversion unit and the charge accumulation electrode
Implementation Method 2
the inorganic oxide semiconductor material layer contains indium (In) atoms, tin (Sn) atoms, titanium (Ti) atoms, and zinc (Zn) atoms
Data Source
AI summary
An imaging element 10 includes a first electrode 21, a charge accumulation electrode 24 disposed apart from the first electrode 21, a photoelectric conversion unit 23 formed in contact with the first electrode 21 and above the charge accumulation electrode 24 with an insulation layer 82 interposed between the photoelectric conversion unit 23 and the charge accumulation electrode 24, and a second electrode 22 formed on the photoelectric conversion unit 23. The photoelectric conversion unit 23 includes a photoelectric conversion layer 23A and an inorganic oxide semiconductor material layer 23B disposed in an order of the photoelectric conversion layer 23A and the inorganic oxide semiconductor material layer 23B from the second electrode side. The inorganic oxide semiconductor material layer 23B contains indium (In) atoms, tin (Sn) atoms, titanium (Ti) atoms, and zinc (Zn) atoms.