Stacked Imaging Sensor Memory for High-Speed Motion Capture
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Solution Overview
Problem
Current imaging devices face challenges in achieving high-speed operation, low power consumption, and high reliability, particularly in capturing moving objects with minimal distortion and data retention issues due to high off-state current in transistors.
Innovation Solution
The imaging device incorporates a layered structure with a photoelectric conversion device and circuits, including transistors with metal oxide channels, which enable efficient imaging data generation, storage, and reading, utilizing OS transistors for low off-state current and long data retention, and Si transistors for high-speed data processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional imaging devices are used, then basic imaging function is provided, but high-speed continuous shooting and data retention capability are lacking
Solution Approach 1:
The imaging device is divided into multiple functional layers: a first substrate with photoelectric conversion devices, a second substrate with memory circuits, and a third substrate with readout circuits. This segmentation allows each layer to specialize in specific functions, enabling high-speed continuous shooting while maintaining data retention capability through the dedicated memory circuit layer.
Solution Approach 2:
The patent transitions from a planar single-substrate structure to a three-dimensional stacked multi-substrate structure. By adding the vertical dimension with multiple layers connected via conductive plugs and insulating films, the device achieves both high-speed processing in the readout layer and data retention in the memory layer simultaneously.
2Productivity
If imaging device processes data at high speed, then continuous shooting is enabled, but power consumption increases
Solution Approach 1:
The memory function is extracted from the main imaging circuit and placed in a separate second substrate. This allows the photoelectric conversion and readout operations to proceed at high speed while the memory circuit handles data retention independently, reducing the power consumption burden on the high-speed processing circuits.
Solution Approach 2:
The second substrate with memory circuits acts as an intermediary layer between the photoelectric conversion devices in the first substrate and the readout circuits in the third substrate. This intermediary structure allows data to be temporarily stored and managed separately, enabling high-speed processing without proportionally increasing overall power consumption.
3Ease of manufacture
If simple structure is used, then manufacturing is easier, but memory function and reliability are compromised
Solution Approach 1:
Each substrate layer is designed with multi-functionality: the first substrate handles photoelectric conversion and initial data generation, the second substrate provides both data storage and circuit interconnection, and the third substrate manages readout and signal processing. This universal design allows the multi-layer structure to achieve memory function without requiring entirely separate additional components.
Solution Approach 2:
The patent implements a nested structure where the second substrate with memory circuits is positioned between the first substrate (photoelectric conversion) and the third substrate (readout). The conductive plugs and insulating films create a nested arrangement of functional elements, allowing the memory function to be integrated within the overall device structure rather than as a separate external component.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for high-speed imaging, low power consumption, and reliable data retention, enabling undistorted images of moving objects with reduced power usage and simplified circuitry.
Implementation Method 1
the first layer includes a photoelectric conversion device
Data Source
AI summary
An imaging device having a memory function is provided. Alternatively, an imaging device suitable for taking images of a moving object is provided. The imaging device includes first to third layers; the second layer is provided between the first and the third layer; the first layer includes a photoelectric conversion device; the second layer includes a first and a second circuit; the third layer includes a third and a fourth circuit; the first circuit and the photoelectric conversion device have a function of generating imaging data; the third circuit has a function of reading the imaging data; the second circuit has a function of storing the imaging data read by the third circuit; the fourth circuit has a function of reading the imaging data stored in the second circuit; and the first circuit and the second circuit include a transistor including a metal oxide in a channel formation region.