Stacked Inductor with Multi-Layer Lower Coils
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Solution Overview
Problem
Conventional on-chip stacked inductors with high parasitic resistance in the lower metal layer degrade the quality factor (Q factor), limiting their performance in RF applications despite increased inductance.
Innovation Solution
A stacked inductor design with multiple layers of metal coils aligned vertically and interconnected through vias, reducing parasitic resistance by increasing the thickness of the lower metal coils, thereby enhancing the Q factor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional stacked inductor structure is used with single-layer metal coils, then inductance is increased by more than two times compared with single-layer inductor, but parasitic resistance becomes high due to thin lower metal layer, degrading Q factor
Solution Approach 1:
The patent combines multiple metal layers (at least two layers) to form each lower layer metal coil, merging the conductive paths in parallel. This reduces the parasitic resistance of the lower layer coils while maintaining the stacked inductance benefit, thereby improving the overall Q factor without sacrificing the inductance enhancement.
2Area of stationary object
If conventional stacked inductor structure is used, then chip area is reduced significantly, but Q factor is degraded due to high resistance in lower metal layer
Solution Approach 1:
By merging multiple metal layers to form thick lower layer metal coils, the patent reduces the parasitic resistance that would otherwise degrade the Q factor. This allows the stacked inductor to maintain both its area-reducing advantage and its Q factor performance for RF applications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design achieves increased inductance without expanding chip area and significantly improves the Q factor by over 20% compared to conventional structures, enabling more efficient RF performance.
Implementation Method 1
adjacent metal coils being connected at the corresponding ends through a via
Implementation Method 2
a top layer metal coil, and at least two lower layer metal coils, the metal coils being aligned with each other
Data Source
AI summary
A stacked inductor with combined metal layers is represented in this invention. The stacked inductor includes: a top layer metal coil, and at least two lower layer metal coils, the metal coils being aligned with each other; adjacent metal coils being connected at the corresponding ends through a via; wherein, each of the lower layer metal coils is consisted of plural layers of metal lines which are interconnected. With the same chip area, the stacked inductor of the present invention can achieve higher inductance and Q factor because of the mutual inductance generated from the plural layers of metal lines and the reduced parasitic resistance.


