Stacked Interconnect Capacitor Structures for Variable Capacitance
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Solution Overview
Problem
The increasing demand for higher performance, speed, and multifunctionality in semiconductor devices requires the development of finer patterns and higher integration of passive elements, including capacitors, which existing technologies struggle to achieve effectively.
Innovation Solution
A semiconductor device with a capacitor structure featuring multiple electrode layers and dielectric layers, along with conductive vias and connection terminals, allows for the implementation of various capacitances by configuring capacitor units in parallel or series, enabling high-density and high-voltage capacitors within a reduced device size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If existing capacitor structures are used, then device size is reduced, but integration density and performance demands cannot be met
Solution Approach 1:
The capacitor structure is segmented into multiple electrode layers (first electrode layer, second electrode layer, third electrode layer) separated by dielectric layers. This segmentation allows the formation of multiple capacitor units within a single capacitor structure, enabling higher integration density without proportionally increasing device footprint. Each electrode-dielectric pair forms an independent capacitive element that can be configured in series or parallel.
Solution Approach 2:
Multiple capacitor units are nested within a single capacitor structure by stacking electrode layers and dielectric layers vertically. The first capacitor unit includes the first electrode layer, second electrode layer, and first dielectric layer, while the second capacitor unit includes the second electrode layer, third electrode layer, and second dielectric layer. This nested arrangement achieves high integration density by utilizing vertical space efficiently.
2Adaptability or versatility
If multiple electrode layers are used to achieve various capacitances, then capacitance versatility is improved, but manufacturing precision requirements increase
Solution Approach 1:
The capacitor structure uses identical electrode layers (second electrode layer serves as positive electrode for first capacitor unit and negative electrode for second capacitor unit) and similar dielectric layers across different capacitor units. This universal design approach allows the same manufacturing processes and materials to be used throughout, reducing the complexity of precision control while achieving various capacitance values through different configurations of the same basic structures.
Solution Approach 2:
Different capacitance values are achieved by locally varying the area of electrode layers or the thickness of dielectric layers in specific regions, while maintaining the overall stacked structure. This allows capacitance customization without requiring fundamental changes to the manufacturing process or precision requirements.
3Adaptability or versatility
If capacitor structures are integrated into interconnection layers, then device functionality is improved, but interconnection layer complexity increases
Solution Approach 1:
The capacitor structures are merged with the interconnection layer by disposing them within the same layer. The first connection terminal and second connection terminal are formed as part of the interconnection structure, eliminating the need for separate capacitor fabrication processes and reducing overall device complexity despite enhanced functionality.
Data Source
AI summary
A semiconductor device including: a device layer on a substrate; an interconnection layer disposed on the device layer, wherein the interconnection layer includes conductive interconnections forming a plurality of layers; and first and second capacitor structures disposed inside the interconnection layer. Each of the first and second capacitor structures includes: electrode layers spaced apart from each other in a vertical direction and forming three or more layers; dielectric layers between the electrode layers; conductive vias respectively connected to one of the electrode layers and extending vertically; a first connection terminal electrically connected to a lowermost electrode layer; and a second connection terminal electrically connected to at least one of the electrode layers, wherein the first capacitor structure and the second capacitor structure include the same number of electrode layers, and wherein a first capacitance of the first capacitor structure is different from a second capacitance of the second capacitor structure.