Stacked Logic and Passive Layout With Backside Power Contacts

The patent combines passive devices (diodes, capacitors) and active devices (FETs) into a single integrated semiconductor structure using unified fabrication processes. The passive devices are formed within the same process flow as the active devices, merging previously separate manufacturing sequences into one cohesive process that reduces overall complexity while enhancing device functionality.

The patent employs universal fabrication processes that can manufacture both passive and active devices using the same equipment and process steps. The diffusion, oxidation, and deposition processes serve multiple functions by creating different device types simultaneously, allowing a single process module to produce multi-functional semiconductor structures.

The patent transitions from planar device layouts to three-dimensional stacked architectures, where multiple FETs are vertically stacked above each other. This dimensional change allows significant increase in device density without proportionally increasing manufacturing precision requirements, as the vertical stacking can be achieved through self-aligned processes that leverage existing lithographic capabilities.

The patent segments the semiconductor structure into multiple discrete stacked FETs, each with its own gate, source, and drain regions. This segmentation allows independent optimization and control of each transistor while maintaining compact overall footprint, enabling high device density through modular vertical integration rather than requiring monolithic high-precision structures.