Stacked Semiconductor Memory Layout for BTI-Stable Multi-Layer Reads

The patent merges the connection function of multiple contact electrodes into a single common conductive layer that electrically connects transistors in each memory layer. This consolidation maintains electrical connectivity while significantly reducing the area occupied by hook-up regions, as the common conductive layer serves multiple transistors simultaneously rather than requiring individual contact electrodes for each transistor.

The common conductive layer performs multiple functions: it acts as a gate electrode for transistors in one memory layer, a source/drain electrode for transistors in another memory layer, and provides electrical connection across multiple layers. This multi-functionality eliminates the need for separate contact electrodes, reducing hook-up region area while maintaining connectivity.

The patent transitions from planar transistor arrangement to a three-dimensional stacked memory structure with multiple memory layers arranged vertically. This dimensional change allows transistors to be densely packed in the vertical direction while maintaining adequate horizontal spacing between gate electrodes in each layer, thereby increasing memory capacity without excessively increasing electrostatic capacity between gates.

The patent divides the memory structure into multiple separate memory layers, each containing transistors with their own gate electrodes. This segmentation isolates the electrostatic fields of gate electrodes in different layers, reducing the overall electrostatic capacity between gates while allowing high-density arrangement through vertical stacking.

The patent implements periodic switching of transistor states during read operations using a decode circuit. Instead of maintaining continuous high-voltage states that exacerbate BTI effects, the system periodically switches transistors between ON and OFF states, allowing recovery periods that mitigate cumulative BTI damage while still enabling rapid data access from multiple memory layers.

The patent uses a decode circuit to dynamically switch transistor states during read operations. This dynamic control allows the system to selectively activate only the transistors needed for current read operations, minimizing the time that transistors are subjected to high stress conditions that cause BTI effects, thereby protecting data integrity while maintaining fast access speeds.