Stacked Semiconductor Memory Capacitors for Higher Density Integration
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Solution Overview
Problem
Current semiconductor devices face challenges in increasing data storage capacity and achieving improved electrical properties and integration, particularly in electronic systems requiring high-capacity data storage.
Innovation Solution
A semiconductor device design featuring a first and second semiconductor structure with distinct gate electrodes, interlayer insulating layers, contact plugs, and capacitor structures, where the gate electrodes and contact plugs have different potentials, and are alternately stacked to enhance electrical properties and integration, including a peripheral region insulating layer and interconnection structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are arranged three-dimensionally to increase data storage capacity, then data storage capacity is improved, but device complexity increases
Solution Approach 1:
The patent implements three-dimensional memory cell arrangement by stacking multiple semiconductor structures vertically, transitioning from two-dimensional planar layout to three-dimensional stacked architecture. This enables increased storage capacity by utilizing the vertical dimension while maintaining compact form factor.
Solution Approach 2:
The memory device is divided into multiple discrete semiconductor structures, each containing separate gate electrodes, interlayer insulating layers, and contact plugs. This segmentation allows independent fabrication and integration of multiple memory cells, simplifying the overall manufacturing process despite the three-dimensional configuration.
2Reliability
If gate electrodes and contact plugs with different potentials are alternately stacked to improve electrical properties, then electrical properties are improved, but manufacturing precision requirements increase
Solution Approach 1:
Different regions of the semiconductor structure are assigned different electrical potentials through strategically placed gate electrodes and contact plugs. The first and second gate electrodes are maintained at different potentials, and contact plugs are positioned to establish specific potential distributions, optimizing electrical properties for memory operations in different local regions.
Solution Approach 2:
Multiple functional layers including gate electrodes, interlayer insulating layers, and contact plugs are combined into a single integrated stacked structure. This merging of multiple components into one unified semiconductor structure simplifies fabrication by reducing the number of separate assembly steps while maintaining precise electrical characteristics.
Data Source
AI summary
A semiconductor device includes a first semiconductor structure including circuit elements on a first substrate, a lower interconnection structure connected to the circuit elements, and a peripheral region insulating layer covering the circuit elements; and a second semiconductor structure including a second substrate on the first substrate, a first stack structure including first and second gate electrodes spaced apart from each other and stacked on the second substrate, interlayer insulating layers alternately stacked with the first and second gate electrodes, first and second contact plugs passing through the first and second gate electrodes, and contact plug insulating layers alternately disposed with the interlayer insulating layers and surrounding the contact plugs. The second semiconductor structure includes a first capacitor structure including the first gate electrode, a contact plug insulating layer(s), and the second contact plug, or the second gate electrode, a contact plug insulating layer(s), and the first contact plug.