Stacked Memory Contact Electrode Structure for 3D Layer Connectivity
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Solution Overview
Problem
Existing semiconductor memory devices face challenges in efficiently connecting conductive layers and memory cells, leading to potential performance limitations and integration issues.
Innovation Solution
A semiconductor memory device design featuring stacked conductive layers with specific configurations, including first and second contact electrodes, insulating columns, and conductive members, which enhance connectivity and integration of memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single contact electrode is used to connect conductive layers, then the structure is simple, but the connectivity and integration efficiency are insufficient
Solution Approach 1:
The contact electrode is divided into multiple segments (first contact electrode and second contact electrode) that are arranged in a stacked configuration. Each segment connects to different conductive layers, enabling independent control and improved connectivity without requiring a single complex electrode structure.
Solution Approach 2:
The contact electrodes are arranged in the stacking direction (vertical dimension) rather than only in the planar direction. This three-dimensional arrangement allows multiple contact electrodes to connect to different conductive layers at different heights, improving integration efficiency while maintaining structural organization.
2Productivity
If multiple contact electrodes are stacked to improve connectivity, then the connectivity improves, but the device complexity increases
Solution Approach 1:
The stacked contact electrode structure serves multiple functions: it provides electrical connection between conductive layers, enables selective activation of memory cells, and facilitates efficient signal routing. This multi-functionality justifies the increased structural complexity by delivering superior integration efficiency.
Solution Approach 2:
The first and second contact electrodes are nested in the stacking direction, with each electrode positioned at a different height level. This nested arrangement allows compact integration of multiple connection points within a limited vertical space, improving integration efficiency without excessive complexity increase.
3Reliability
If contact electrodes extend through multiple conductive layers, then the connectivity improves, but the manufacturing precision requirements increase
Solution Approach 1:
Instead of forming a single continuous contact electrode through multiple conductive layers, the connection is segmented into multiple discrete electrodes at different heights. Each electrode can be formed and aligned independently, reducing the cumulative alignment error that would occur with a single long electrode and lowering manufacturing precision requirements.
Data Source
AI summary
A semiconductor memory device comprises: conductive layers stacked in a stacking direction; memory cells connected to the conductive layers; a first contact electrode extending in the stacking direction and connected to one of the conductive layers; and a second contact electrode connected to an end portion in the stacking direction of the first contact electrode. The first contact electrode comprises: a first conductive member extending in the stacking direction; an insulating column which extends in the stacking direction and has an outer peripheral surface covered by the first conductive member; and a second conductive member provided in the end portion on a second contact electrode side in the stacking direction of the first contact electrode, has an outer peripheral surface contacting the first conductive member, and has a surface on the second contact electrode side in the stacking direction contacting the second contact electrode.