Stacked Memory Driver Placement Above Arrays for Higher Density
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Solution Overview
Problem
In stacked memory arrays, the increasing number of memory cells and access lines requires more string drivers, but placing them underneath the array leads to complex routing and limited space, making it difficult to accommodate the increased number of drivers without expanding the integrated circuit die's footprint.
Innovation Solution
The string drivers are moved above the memory array, using monocrystalline semiconductors to reduce resistance and current leakage, and are formed and transferred to a surface above the dielectric using a transfer technique that avoids forming them on the dielectric surface, allowing for higher driver density and improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If string drivers are placed underneath the memory array, then routing is simplified, but the available space becomes limited and complex routing is required to accommodate increased number of drivers
Solution Approach 1:
The patent inverts the conventional placement location of string drivers from underneath the memory array to above the memory array. This inversion resolves the space constraint problem by utilizing the previously underutilized space above the array, while still maintaining manageable routing complexity through the introduced access lines that extend from data lines to the newly positioned drivers.
2Area of stationary object
If the footprint of the integrated circuit die is kept constant, then device integration is maintained, but the number of string drivers that can be accommodated is limited
Solution Approach 1:
The patent transitions from a two-dimensional planar arrangement to a three-dimensional vertical arrangement by placing string drivers above the memory array in multiple tiers. This dimensional change allows multiple drivers to be stacked vertically within the same footprint, thereby increasing the number of accommodated drivers without expanding the die area.
3Quantity of substance
If more string drivers are added to support increased memory capacity, then memory capacity increases, but resistance and current leakage increase
Solution Approach 1:
The patent introduces access lines as intermediary conductors that connect data lines to the control gates of string drivers positioned above the array. These access lines serve as mediators that optimize the electrical connection path, reducing resistance and current leakage by providing direct, short-distance connections between the data lines and the control gates, thereby enabling increased driver density without proportional increases in energy loss.
Data Source
AI summary
A memory can have a stacked memory array that can have a plurality of levels of memory cells. Each respective level of memory cells can be commonly coupled to a respective access line. A plurality of drivers can be above the stacked memory array. Each respective driver can have a monocrystalline semiconductor with a conductive region coupled to a respective access line.


