Stacked Memory Repair Storage for Multi-Die Semiconductor Integration

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Solution Overview

Problem

The integration and reliability of semiconductor devices are compromised by the need to store repair information for memory blocks in each die, which occupies valuable space and can be inefficient when performed after bonding.

Innovation Solution

Storing repair information for multiple semiconductor dies in a centralized repair storage within one of the dies, allowing for pre- and post-bonding repair operations to enhance integration and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If repair information is stored in each semiconductor die, then repair operations can be performed independently, but device integration is reduced and valuable space is occupied

Engineering Contradiction:
Improverepair operation capabilityVSAvoidintegration level
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent consolidates repair information storage from individual dies to a centralized repair storage unit shared across multiple semiconductor dies. This merging approach eliminates redundant storage structures, increases integration, and reduces the space occupied on each die while maintaining the ability to perform repair operations on all memory blocks through the shared repair information.

Inventive Principle:
Principle #5Merging (Combining)

2Reliability

If repair operations are performed after bonding, then post-bonding defects can be addressed, but manufacturing time and complexity increase

Engineering Contradiction:
Improvedefect correction capabilityVSAvoidmanufacturing efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent performs repair operations on semiconductor dies before the bonding process by utilizing the centralized repair storage to store and distribute repair information. This preliminary action allows defects to be corrected prior to assembly, avoiding the need for time-consuming post-bonding repair operations and thereby improving manufacturing efficiency while maintaining reliability.

Inventive Principle:
Principle #10Preliminary action

3Device complexity

If centralized repair storage is used, then integration is increased and space is optimized, but repair information must be transferred between dies

Engineering Contradiction:
Improveintegration levelVSAvoiddata transfer requirement
Core Design Contradiction:
Device complexityVSEase of manufacture

Solution Approach 1:

The patent introduces repair information transfer circuits as intermediary structures that facilitate the communication between semiconductor dies and the centralized repair storage. These circuits automatically handle the data transfer of repair information, eliminating the need for complex manual programming or external intervention, thereby simplifying the manufacturing process while enabling the benefits of centralized storage and increased integration.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20260074003A1Semiconductor device including repair storage
Publication Date: 2026.03.12 SAMSUNG ELECTRONICS CO LTD
  • US20260074003A1 patent drawing
  • US20260074003A1 patent drawing
  • US20260074003A1 patent drawing

AI summary

A semiconductor device includes a first semiconductor die including a plurality of first memory blocks and a plurality of first repair registers respectively connected to the plurality of first memory block; and a second semiconductor die including a plurality of second memory blocks, a plurality of second repair registers respectively connected to the plurality of second memory blocks, and a repair storage in which first pieces of repair information for the plurality of first memory blocks and second pieces of repair information for the plurality of second repair blocks are stored. The first semiconductor die and the second semiconductor die are stacked on each other, and when the semiconductor device is powered on, the plurality of first repair registers receive and store the first pieces of repair information from the repair storage, and the plurality of first memory blocks perform a repair operation based on the first pieces of repair information stored in the plurality of first repair registers.