Stacked Memory Structure With Sacrificial Trench Source Formation
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Solution Overview
Problem
There is a demand for electronic devices with high-performance, high-capacity data storage units that retain data even when power is turned off, and existing technologies have not adequately addressed this need.
Innovation Solution
The manufacturing method involves forming a first source layer with a trench, a first sacrificial layer, and a stacked structure of alternating material layers, creating openings and channels, and forming a second source layer coupled to channel layers through the removal of the sacrificial layer, resulting in a structure with improved conductivity and capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If high-capacity data storage units are designed with complex stacked structures, then storage capacity and performance are improved, but manufacturing complexity increases
Solution Approach 1:
The storage device is divided into multiple functional layers including first and second source layers, channel layers, blocking layers, and alternating material layers. Each layer performs a specific function, allowing complex storage capacity requirements to be met through modular layering rather than monolithic structure, thus managing manufacturing complexity while increasing storage capacity.
Solution Approach 2:
The patent implements a nested structure where channel layers are surrounded by blocking layers, which are in turn surrounded by alternating material layers. This nested arrangement maximizes storage capacity within a compact vertical structure, achieving high-density storage without proportionally increasing manufacturing complexity through systematic layer integration.
2Duration of action of stationary object
If data storage units are designed to retain data without power (non-volatile), then data retention capability is improved, but read and write speeds may deteriorate
Solution Approach 1:
The patent employs different material compositions in different layers to optimize local properties: tunnel barrier layers use materials like oxide or nitride for high data retention, while channel layers use materials with high electron mobility for fast read/write operations. This local optimization allows simultaneous achievement of non-volatile data retention and high-speed performance through material property differentiation across layers.
3Reliability
If complex stacked structures are manufactured with multiple precise layers, then device performance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent forms a complete stacked structure including all alternating material layers, blocking layers, and channel layers in a predetermined sequence before final assembly. This preliminary formation of the entire layer stack with integrated contact holes and conductive layers reduces the need for subsequent precision adjustments, thereby maintaining high device performance while managing manufacturing precision requirements through systematic upfront fabrication.
Data Source
AI summary
A method for manufacturing an electronic device includes forming a first source layer including a trench, forming a first sacrificial layer in the trench, forming a first structure over the first source layer, wherein the first structure includes first material layers and second material layers which are alternately stacked over the each other, forming first openings passing through the first structure and extending to the first sacrificial layer, forming first channel layers in the first openings, forming a slit passing through the first structure and extending to the first sacrificial layer, forming a second opening by removing the first sacrificial layer through the slit, and forming a second source layer in the second opening, wherein the second source layer is coupled to the first channel layers.