3D Stacked Semiconductor Memory With Through-Via Capacitor Layout
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Solution Overview
Problem
Existing semiconductor devices face challenges in increasing data storage capacity and integration efficiency.
Innovation Solution
A semiconductor device is designed with a stacked structure comprising multiple semiconductor structures and a passive element structure, including a conductive layer and through-vias, to enhance integration and data storage capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are arranged two-dimensionally, then the device structure is simple, but the data storage capacity is limited
Solution Approach 1:
The patent transitions from two-dimensional memory cell arrangement to three-dimensional stacked structure by adding vertical layers (first semiconductor structure, second semiconductor structure, third semiconductor structure stacked in Z-direction), thereby increasing data storage capacity without proportionally increasing planar area
2Productivity
If multiple semiconductor structures are stacked, then the integration is improved, but the manufacturing complexity increases
Solution Approach 1:
The device is divided into separate semiconductor structures (first, second, third) that can be manufactured and processed independently before being stacked together, allowing modular manufacturing that improves integration while managing complexity through standardized interfaces
Solution Approach 2:
Multiple semiconductor structures are nested vertically in a stacked configuration where each structure contains circuit elements and interconnection lines that are integrated with adjacent structures through bonding interfaces, achieving high integration density
3Area of stationary object
If passive elements are placed on the lower surface of substrates, then the area for circuit elements is expanded, but the connection complexity increases
Solution Approach 1:
Through-vias act as intermediary connection structures that penetrate through the substrate to electrically connect passive elements on the lower surface with circuit elements on upper layers, managing connection complexity through standardized via structures
Solution Approach 2:
Passive elements are positioned on the lower surface of substrates (utilizing the Z-dimension) rather than competing for planar space with circuit elements, effectively expanding the available area for circuit elements while maintaining electrical connectivity through vertical via structures
Data Source
AI summary
A semiconductor device may include: a first semiconductor structure including a first substrate, first circuit elements on the first substrate, first circuit interconnection lines on the first circuit elements, and a first peripheral region insulating layer; a second semiconductor structure including a first region of a second substrate on the first semiconductor structure, second circuit elements on the first region of the second substrate, and second circuit interconnection lines on the second circuit elements; a capacitor structure including a first capacitor electrode spaced apart from the first circuit interconnection lines on a lower surface of the second substrate, a second region of the second substrate facing the first capacitor electrode, and a first through-via extending in the second substrate and electrically connected to the first capacitor electrode; and a third semiconductor structure including a third substrate on the second semiconductor structure, and memory cells on the third substrate.