Vertically Stacked MEMS Package for Low-Profile RF Linearity

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Solution Overview

Problem

Conventional silicon substrates used in RF device fabrication suffer from harmonic distortion and low resistivity, which impede high-linearity performance and quality factor degradation in MEMS devices, while stacked-device assemblies face challenges in achieving low-profile, compact designs for portable applications.

Innovation Solution

A microelectronics package with a vertically stacked structure of MEMS and controller devices, featuring a MEMS device region, a stop layer, MEMS through-via, a controller device region, a controller bonding layer, and a controller through-via, where the MEMS and controller components are electrically connected through respective connecting layers, and the package includes enhancement regions with barrier and thermally conductive layers to enhance reliability and thermal performance, with a mold compound providing thermal conductivity and low dielectric constant.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional silicon substrates are used for RF device fabrication, then manufacturing cost is reduced and manufacturing capacity is increased, but harmonic distortion increases and linearity performance deteriorates

Engineering Contradiction:
Improvemanufacturing cost and capacityVSAvoidharmonic distortion
Core Design Contradiction:
Ease of manufactureVSObject-generated harmful factors

Solution Approach 1:

The patent extracts the problematic silicon substrate layer and replaces it with a diamond-like carbon (DLC) layer. The DLC layer is deposited over the silicon substrate, effectively removing the harmful interaction between RF signals and the silicon substrate while retaining the mechanical support function of the substrate.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent employs a composite structure combining silicon substrate with diamond-like carbon coating. The silicon substrate provides mechanical strength and manufacturing compatibility, while the DLC layer provides low loss tangent and reduced harmonic distortion, creating a material composite that achieves both manufacturing ease and improved RF performance.

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If conventional silicon substrates are used for RF device fabrication, then manufacturing benefits are achieved, but resistivity is low and quality factor deteriorates

Engineering Contradiction:
Improvemanufacturing benefitsVSAvoidquality factor
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent removes the lossy silicon substrate from the RF signal path by extracting only the necessary mechanical support function and replacing the electrical interface with a DLC layer that has superior resistivity and quality factor characteristics.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The composite structure of silicon substrate with DLC coating provides both the manufacturing advantages of silicon and the electrical performance advantages of DLC, achieving high quality factor and resistivity while maintaining ease of manufacture.

Inventive Principle:
Principle #40Composite materials

3Productivity

If stacked-device assembly technology is used to achieve electronics densification, then device density is increased, but package thickness increases and low-profile requirements are not met

Engineering Contradiction:
Improveelectronics densificationVSAvoidpackage thickness
Core Design Contradiction:
ProductivityVSLength of stationary object

Solution Approach 1:

The patent employs thin-film technology to create ultra-thin device layers. The MEMS device and controller are fabricated as thin films on flexible substrates, enabling high device density while maintaining minimal thickness. The thin-film approach allows the package to meet low-profile requirements while achieving electronics densification.

Inventive Principle:
Principle #30Flexible shells and thin films

Solution Approach 2:

The patent implements a nested vertical stacking configuration where the controller device is positioned directly beneath the MEMS device, with through-vias providing electrical connection through the intermediate layers. This nested arrangement maximizes space utilization and achieves high density without increasing lateral footprint or excessive thickness.

Inventive Principle:
Principle #7Nested doll (Nesting)

4Adaptability or versatility

If stacked-device assembly is implemented with thick silicon substrates, then device integration is achieved, but final product thickness becomes large and portable application requirements are not met

Engineering Contradiction:
Improvedevice integrationVSAvoidfinal product thickness
Core Design Contradiction:
Adaptability or versatilityVSLength of stationary object

Solution Approach 1:

The patent replaces thick silicon substrates with thin-film flexible substrate technology, enabling device integration while reducing thickness by orders of magnitude. The thin-film substrates maintain mechanical integrity while allowing the final product to meet portable application thickness requirements.

Inventive Principle:
Principle #30Flexible shells and thin films

Data Source

PatentUS20250002330A1Microelectronics package with vertically stacked MEMS device and controller device
Publication Date: 2025.01.02 QORVO US INC
  • US20250002330A1 patent drawing
  • US20250002330A1 patent drawing
  • US20250002330A1 patent drawing

AI summary

The present disclosure relates to a microelectronics package with a vertically stacked structure of a microelectromechanical systems (MEMS) device and a controller device. The MEMS device includes a MEMS component, a MEMS through-via, and a MEMS connecting layer configured to electrically connect the MEMS component with the MEMS through-via. The controller device includes a controlling component, a controller through-via, and a controller connecting layer configured to electrically connect the controlling component with the controller through-via. The controller through-via is in contact with the MEMS through-via, such that the controlling component in the controller device is configured to control the MEMS component in the MEMS device.