Stacked Micro LED Pixel Structure for Red Light Intensity
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Solution Overview
Problem
Micro LED displays face challenges in maintaining high luminous intensity, particularly for red light, due to the small size of micro LEDs and difficulties in transferring them to circuit boards, leading to reduced pixel density and efficiency.
Innovation Solution
A pixel device structure is developed with a first light emitting device emitting red light and second and third light emitting devices emitting green and blue light, respectively, stacked vertically with adhesive layers and connection layers to enhance luminous intensity, and a display apparatus incorporating this pixel device to improve red light emission efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If micro LEDs are arranged on a plane for each sub-pixel, then pixel density can be increased, but the number of micro LEDs required becomes extremely large making transfer to circuit board difficult
Solution Approach 1:
The patent transitions from a two-dimensional planar arrangement of micro LEDs to a three-dimensional vertical stacking configuration. By stacking red, green, and blue light emitting devices vertically, the system achieves high pixel density without requiring an excessive number of individual micro LEDs on the circuit board, thus resolving the contradiction between pixel density and device complexity.
Solution Approach 2:
The patent combines multiple light emitting devices (red, green, and blue) into a single integrated pixel structure. Instead of using separate micro LEDs for each sub-pixel, the invention merges them into a compact stacked configuration where multiple colors are emitted from one pixel location, reducing the total number of components while maintaining high pixel density.
2Device complexity
If vertically stacked structure is used to reduce number of micro LEDs, then device complexity is reduced, but luminous intensity of red light becomes relatively low
Solution Approach 1:
The patent applies local quality by using different semiconductor material systems for different color devices within the stacked structure. Specifically, arsenic or phosphide-based semiconductor layers are used for red light emitting devices while nitride-based semiconductor layers are used for green and blue devices. This material optimization enables the red light emitting device to achieve sufficient luminous intensity despite the vertical stacking configuration.
Solution Approach 2:
The patent changes the material parameters of the red light emitting device by selecting arsenic or phosphide-based semiconductor layers with appropriate bandgap characteristics. This parameter change allows the red device to emit light with peak wavelength longer than green and blue devices while maintaining adequate luminous intensity, resolving the contradiction between reduced component count and red light output.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases the luminous intensity of red light while reducing the number of micro LEDs, enhancing display performance and pixel density without compromising light emission efficiency.
Implementation Method 1
Light emitting device are semiconductor devices using a light emitting diode which is an inorganic light source
Implementation Method 2
the first light emitting structure emits light having a peak wavelength longer than peak wavelengths of light emitted from the second and third light emitting structures
Data Source
AI summary
A pixel device including first light emitting device; a second light emitting device disposed laterally adjacent to the first light emitting device; a first cover layer covering the first light emitting device and the second light emitting device; and connection layers disposed on the first cover layer, and electrically connected to the first and second light emitting devices, in which the first light emitting device includes a first light emitting structure, and the second light emitting device includes a second light emitting structure and a third light emitting structure, in which the first light emitting structure emits light having a peak wavelength longer than peak wavelengths of light emitted from the second and third light emitting structures, and the second and third light emitting structures emit light having different peak wavelengths from each other.