Stacked MIM Capacitor Layout for Higher Capacitance Density
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Solution Overview
Problem
As integrated circuits evolve with decreasing dimensions, there is a need for higher capacitance in capacitors to maintain electrical performance, while existing methods to increase capacitance, such as using high dielectric materials or reducing plate separation, face challenges like increased cost, environmental impact, and reduced breakdown voltage.
Innovation Solution
A MIM dual capacitor structure is formed with two parallel plate capacitors sharing a common electrode, connected in parallel, to increase capacitance per unit area without requiring additional mask layers, utilizing a layout shift design compatible with current process flows.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high dielectric materials are used to increase capacitance, then capacitance is improved, but cost and environmental impact worsen
Solution Approach 1:
The patent changes the geometric parameters of the capacitor structure by forming a second capacitor structure over the first capacitor structure, increasing the effective capacitance through structural configuration rather than material substitution. This approach maintains compatibility with existing low-cost dielectric materials while achieving higher capacitance values.
2Reliability
If capacitor area is increased to increase capacitance, then capacitance is improved, but chip area worsens
Solution Approach 1:
The patent implements a nested configuration where the second capacitor structure is formed directly over the first capacitor structure, with both structures sharing the same lateral footprint. This vertical nesting approach allows the capacitors to be stacked within the same planar area, effectively doubling the capacitance per unit chip area without increasing the overall chip footprint.
3Reliability
If complex fabrication processes are used to increase capacitance, then capacitance is improved, but device complexity worsens
Solution Approach 1:
The patent employs a universal fabrication approach where the second capacitor structure is formed using the same material layers and process steps as the first capacitor structure. The existing capacitor electrode layers, dielectric layers, and interconnect structures serve dual purposes for both capacitors, eliminating the need for additional specialized process steps and maintaining fabrication simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The MIM dual capacitor structure achieves higher capacitance per unit area, maintaining electrical performance while being compatible with existing design and fabrication processes, thus enhancing chip design capabilities.
Implementation Method 1
A MIM dual capacitor structure is formed with two parallel plate capacitors sharing a common electrode, connected in parallel, to increase capacitance per unit area
Data Source
AI summary
The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a MIM dual capacitor structure with an increased capacitance per unit area in a semiconductor structure. Without using additional mask layers, a second parallel plate capacitor can be formed over a first parallel plate capacitor, and both capacitors share a common capacitor plate. The two parallel plate capacitors can be connected in parallel to increase the capacitance per unit area.