Stacked MIM-MOM Capacitor Layout for Higher Capacitance Density
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing capacitor devices face challenges in increasing capacitance per unit area while managing layout area and process complexity.
Innovation Solution
The integration of a MIM capacitor unit and a MOM capacitor unit or the like in a single capacitor device, where the MOM unit is stacked on the MIM unit, with electrical connections through conductive vias, utilizing high-k materials and specific layer structures to enhance capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multiple capacitor units are included to increase capacitance, then capacitance is improved, but layout area and process complexity are increased
Solution Approach 1:
The patent transitions from planar capacitor arrangements to a three-dimensional stacked configuration. Multiple capacitor units are arranged vertically in layers, allowing capacitance to be increased by utilizing the vertical dimension rather than expanding the horizontal layout area. This dimensional change enables higher capacitance density within the same footprint.
Solution Approach 2:
The patent implements a nested structure where capacitor units are stacked within each other in vertical layers. Each capacitor unit is contained within the same horizontal footprint as the substrate, with multiple units nested vertically. This nesting approach allows multiple capacitor units to occupy the same planar area, significantly increasing capacitance without proportionally increasing layout area.
2Quantity of substance
If multiple capacitor units are included to increase capacitance, then capacitance is improved, but process complexity is increased
Solution Approach 1:
The patent merges the fabrication processes for multiple capacitor units into a unified manufacturing flow. Common process steps such as dielectric layer deposition, electrode formation, and patterning are performed simultaneously or sequentially across all capacitor units using the same process modules. This merging of processes reduces the overall process complexity compared to fabricating each capacitor unit separately.
Solution Approach 2:
The patent employs universal process modules that can fabricate multiple types of capacitor units (e.g., MIM and MOM capacitors) using the same equipment and process steps. The manufacturing process is designed to be multi-functional, handling different capacitor configurations through standardized procedures, thereby reducing process complexity despite the diversity of capacitor units being produced.
3Quantity of substance
If MIM and MOM capacitor configurations are integrated in one device, then capacitance per unit area is improved, but device structure is increased
Solution Approach 1:
The patent integrates MIM and MOM capacitor configurations in the vertical dimension rather than placing them side-by-side in the planar direction. Different capacitor types are stacked in alternating layers, allowing both configurations to coexist within the same horizontal footprint. This vertical integration increases capacitance per unit area while managing structural complexity through systematic layering.
Solution Approach 2:
The patent segments the capacitor device into distinct functional layers, with MIM and MOM capacitor units separated into different vertical levels. Each capacitor type occupies specific layers with dedicated electrodes and dielectric structures. This segmentation allows independent optimization of each capacitor configuration while integrating them into a unified device, managing structural complexity through modular layering.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively increases the capacitance per unit area without significantly increasing layout area, while also simplifying the manufacturing process by integrating the MIM and MOM processes.
Implementation Method 1
a material of the second dielectric layer comprises a high dielectric constant (high-k) material
Data Source
AI summary
Provided are a capacitor device and a manufacturing method thereof. The capacitor device includes a first electrode, a second electrode, an insulating layer, a first dielectric layer, a second dielectric layer, a third electrode and a fourth electrode. The first electrode is disposed on a substrate. The second electrode is disposed on the first electrode. The insulating layer is disposed between the first electrode and the second electrode. The first dielectric layer is disposed on the substrate and covers the first electrode, the second electrode and the insulating layer. The second dielectric layer is disposed on the first dielectric layer. The third electrode and the fourth electrode are disposed in the second dielectric layer and separated from each other. The third electrode is electrically connected to the first electrode, and the fourth electrode is electrically connected to the second electrode.