Stacked Nanostructure Semiconductor Layout for Channel Width Control
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving optimal performance and efficiency due to limitations in fabrication and design, particularly in three-dimensional designs where control over nanostructure dimensions and spacing is critical.
Innovation Solution
The semiconductor device structure incorporates nanostructures stacked over a substrate with a gate structure wrapping around them. A dielectric liner layer is used to define the effective number of nanostructures, and an insulating layer is formed to further control the channel width and isolate source/drain structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If three-dimensional designs are used to increase device density, then productivity is improved, but manufacturing precision becomes more difficult to control
Solution Approach 1:
The patent segments the channel region into multiple discrete nanostructures (nanosheets or nanowires) stacked vertically. This segmentation allows independent control of each nanostructure's dimensions and spacing through selective etching processes, thereby maintaining manufacturing precision while achieving high device density through three-dimensional stacking.
Solution Approach 2:
The patent transitions from two-dimensional planar channels to three-dimensional stacked nanostructures by adding the vertical dimension. Multiple nanostructures are stacked along the vertical axis, enabling increased device density without compromising dimensional control, as each layer can be precisely formed and spaced through controlled deposition and etching processes.
2Reliability
If more nanostructures are stacked to increase channel width, then device performance is improved, but parasitic capacitance increases
Solution Approach 1:
The patent introduces dielectric materials as intermediary layers between adjacent nanostructures. These dielectric layers act as electrical insulators that reduce parasitic capacitance coupling between neighboring nanostructures while maintaining the close spacing needed for high device performance, thus resolving the contradiction between increasing channel width and minimizing parasitic effects.
3Productivity
If nanometer technology process nodes are used to achieve higher device density, then productivity is improved, but fabrication complexity increases
Solution Approach 1:
The patent employs a nested structure where multiple nanostructures are stacked within a confined vertical space, similar to nested dolls. This nesting approach achieves high device density by utilizing the vertical dimension efficiently, while the self-aligned nature of the stacked structures simplifies the fabrication process compared to lateral scaling, thereby reducing overall fabrication complexity despite operating at nanometer process nodes.
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a plurality of first nanostructures stacked over a substrate in a vertical direction. The semiconductor device structure also includes a first bottom layer formed adjacent to the first nanostructures, and a first dielectric liner layer formed over the first bottom layer and adjacent to the first nanostructures. The semiconductor device structure further includes a first source/drain (S/D) structure formed over the first dielectric liner layer, and the first S/D structure is isolated from the first bottom layer by the first dielectric liner layer.