Stacked Nanowire Diode Structure for Higher Current Paths
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Solution Overview
Problem
Diodes with a Gate All Around (GAA) structure face reduced current paths due to nanowire or nanosheet structures, limiting their performance and requiring separate manufacturing steps from field effect transistors, increasing costs.
Innovation Solution
A diode with a stacked structure comprising alternating nanowire or nanosheet layers of different materials, connected by conductivity-type sections and a control electrode, allowing for enhanced current flow and shared manufacturing steps with field effect transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a GAA structure with nanowire or nanosheet channels is used in diodes to achieve short channel characteristics, then the channel control is improved, but the current path area is reduced to 10 nm or less, limiting current flow
Solution Approach 1:
The patent transitions from planar 2D current paths to three-dimensional vertical current paths by stacking multiple nanowire or nanosheet channels vertically. This dimensional change allows the current to flow through multiple levels in the vertical direction, effectively increasing the total current path area while maintaining the compact footprint required for short channel characteristics.
Solution Approach 2:
The patent divides the current path into multiple segmented channels arranged vertically. Instead of relying on a single large-area planar channel, the invention uses multiple smaller nanowire or nanosheet channels stacked in series, where each channel contributes to the total current flow. This segmentation allows the diode to achieve sufficient current capacity while maintaining the depleted channel structure needed for short channel control.
2Reliability
If separate manufacturing steps are used for diodes and field effect transistors, then device performance can be optimized independently, but manufacturing complexity and costs increase
Solution Approach 1:
The patent designs a universal manufacturing process that can produce both diodes and field effect transistors using the same GAA fabrication steps. The same nanowire or nanosheet channel structures, gate electrodes, and semiconductor layers used for FETs are also configured to form diode structures by adjusting the conductivity types and terminal connections, eliminating the need for separate dedicated diode manufacturing steps.
Solution Approach 2:
The patent merges the manufacturing processes for diodes and field effect transistors into a single integrated process flow. Both device types share common steps including channel formation, gate electrode deposition, and semiconductor layer processing, with only minor variations in terminal configuration and doping patterns needed to produce the final diode or FET structure.
Data Source
AI summary
A diode of the present disclosure includes a stacked structure, and a first connection section and a second connection section provided at respective ends of the stacked structure in a length direction. The stacked structure includes a first structure and a second structure each having a nanowire structure or a nanosheet structure and stacked alternately in a thickness direction. The first connection section has a first conductivity type, and the second connection section has a second conductivity type. The diode further includes a control electrode section formed to extend at least from a top portion to a side surface of the stacked structure and spaced apart from the first connection section and the second connection section. The first connection section and the control electrode section or the second connection section and the control electrode section are connected electrically.