Stacked Optoelectronic Structure for Multi-Wavelength Light Filtering
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Solution Overview
Problem
Multi-chip-integrated package technologies for light-emitting devices and photodetectors in different wavelength ranges are costly and difficult to reduce device volume, limiting their application in wearable electronics and real-time health monitoring.
Innovation Solution
An optoelectronic device with a substrate, first and second semiconductor stacks, and a first optical structure that includes alternately arranged first and second parts, allowing for the emission or absorption of lights with different wavelengths, and a second optical structure that filters specific wavelengths, reducing the device's volume and cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multi-chip-integrated package technology is used to integrate light-emitting devices and photodetectors of different wavelengths, then functional integration is achieved, but device cost increases and device volume cannot be reduced
Solution Approach 1:
The patent merges multiple semiconductor stacks with different wavelength capabilities into a single integrated device structure. The first semiconductor stack emits or detects first wavelength light, while the second semiconductor stack emits or detects second wavelength light, both within one device package. This combining approach achieves functional integration without requiring separate multi-chip assemblies, thereby reducing device cost and complexity while maintaining multi-wavelength functionality.
2Adaptability or versatility
If multi-chip-integrated package technology is used to integrate light-emitting devices and photodetectors of different wavelengths, then functional integration is achieved, but device volume cannot be reduced
Solution Approach 1:
The patent employs a nested structure where the second semiconductor stack is positioned above the first semiconductor stack in a vertical arrangement. The optical structure is integrated between these stacks, creating a compact three-dimensional configuration. This nesting approach allows multiple functional components to occupy overlapping spatial volumes, significantly reducing the overall device footprint compared to planar multi-chip arrangements.
Solution Approach 2:
The patent transitions from a planar two-dimensional chip arrangement to a three-dimensional vertical stacking configuration. By arranging the first and second semiconductor stacks vertically along the Z-axis with the optical structure integrated between them, the device utilizes the third dimension to achieve compact integration. This dimensional change allows multiple wavelength functions to coexist in a smaller volume by exploiting vertical space rather than horizontal expansion.
3Reliability
If conventional package technology is used, then device functionality is achieved, but wavelength-specific light management is inefficient
Solution Approach 1:
The patent implements local quality optimization through the optical structure that is specifically designed to manage different wavelengths at different locations. The optical structure includes regions with different properties: a first region adjacent to the first semiconductor stack for managing first wavelength light, and a second region adjacent to the second semiconductor stack for managing second wavelength light. This localized optimization ensures efficient wavelength-specific light management while maintaining overall device functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables efficient wavelength-specific light emission and absorption, facilitating applications in bio-geometric feature detection and security surveillance while minimizing device size and cost.
Implementation Method 1
the first active layer emits or absorbs a first light with a first wavelength
Implementation Method 2
the first active layer emits or absorbs a first light with a first wavelength
Implementation Method 3
the second active layer emits or absorbs a second light with a second wavelength smaller than the first wavelength
Implementation Method 4
the second active layer emits or absorbs a second light with a second wavelength smaller than the first wavelength
Implementation Method 5
a first optical structure located between the first semiconductor stack and the second semiconductor stack
Implementation Method 6
a first optical structure located between the first semiconductor stack and the second semiconductor stack
Data Source
AI summary
An optoelectronic device includes a substrate, a first semiconductor stack located on the substrate, a second semiconductor stack located on the first semiconductor stack, and a first optical structure located between the first semiconductor stack and the second semiconductor stack. The first semiconductor stack includes a first semiconductor layer, a second semiconductor layer and a first active layer which emits or absorbs a first light with a first wavelength. The second semiconductor stack includes a third semiconductor layer, a fourth semiconductor layer and a second active layer which emits or absorbs a second light with a second wavelength smaller than the first wavelength. The first optical structure includes a plurality of first parts and a plurality of second parts. The first parts and the second parts are alternately arranged by a first period along a horizontal direction parallel to the substrate.