Stacked Optoelectronic Component for Red and Infrared Emission
Solution Overview
Problem
There is a need for an optoelectronic component that is space-saving and can efficiently generate electromagnetic radiation across multiple wavelength ranges, particularly in the red and infrared spectrum, while maintaining a compact design and minimizing electrical contacts to avoid leakage currents and band bending.
Innovation Solution
The optoelectronic component comprises a semiconductor body with a first semiconductor layer sequence and a second semiconductor layer sequence stacked in a specific arrangement, where the first sequence generates primary radiation in the red wavelength range and the second sequence, optically pumped, absorbs and re-emits secondary radiation in the infrared range, using different III-V compound semiconductor materials to achieve monolithic connection and efficient radiation emission without electrical contacts to the second active region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple separate optoelectronic components are used to generate radiation at different wavelengths, then the spectral coverage is improved, but the device complexity and space requirements increase
Solution Approach 1:
The patent combines multiple active regions with different bandgaps within a single semiconductor body, allowing different wavelength radiations to be generated in one integrated structure rather than using separate components. This merging approach maintains spectral versatility while reducing device complexity and space requirements
Solution Approach 2:
The single semiconductor body is designed to perform multiple functions by incorporating active regions with different bandgaps that can generate radiations at different wavelengths simultaneously. This multi-functional design eliminates the need for multiple separate components while maintaining comprehensive spectral coverage
2Productivity
If electrical contacts are provided for each active region, then the radiation generation efficiency is improved, but leakage currents and band bending increase
Solution Approach 1:
The patent extracts the electrical contacts from the second active region, providing electrical contact only to the first active region. The second active region is optically pumped by radiation from the first active region, eliminating the source of leakage currents and band bending that would arise from direct electrical contact while maintaining radiation generation efficiency through optical coupling
3Ease of manufacture
If the semiconductor body uses a single material system, then the manufacturing process is simplified, but the radiation wavelength range is limited
Solution Approach 1:
The patent employs a composite semiconductor structure with multiple materials having different bandgaps (e.g., GaN, InGaN, AlInN) arranged in distinct active regions within the same semiconductor body. This composite material approach enables generation of radiations across a broad wavelength range from ultraviolet to visible spectrum while maintaining compatibility with established semiconductor manufacturing processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for a compact, efficient generation of broadband radiation with high quantum yield, promoting plant growth through the Emerson effect by simultaneously emitting red and infrared radiation, and enables low-voltage operation with reduced heat dissipation and leakage currents.
Implementation Method 1
The first semiconductor layer sequence (3) has a first active region (6), which generates electromagnetic primary radiation (26) having a first peak wavelength
Implementation Method 2
The second semiconductor layer sequence (7) has a second active region (9), which has a section (9a) configured to partially absorb electromagnetic primary radiation (26) and re-emit electromagnetic secondary radiation (27)
Data Source
AI summary
An optoelectronic component is specified comprising a semiconductor body comprising a first semiconductor layer sequence and a second semiconductor layer sequence which are arranged on top of one another in a stacking direction, wherein the first semiconductor layer sequence has a first active region, which generates electromagnetic primary radiation with a first peak wavelength the second semiconductor layer sequence comprises a second active region, which has a section configured to partially absorb electromagnetic primary radiation and to re-emit electromagnetic secondary radiation having a second peak wavelength, and the first peak wavelength is in a red wavelength range and the second peak wavelength is in an infrared wavelength range, or the first peak wavelength is smaller than the second peak wavelength by at most 100 nanometers.