Stacked Semiconductor Package with Embedded Capacitor Protection

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Solution Overview

Problem

Existing semiconductor packaging techniques have limitations in achieving high integration density and efficient communication bandwidth between stacked semiconductor dies, particularly in protecting embedded passive devices like capacitors during manufacturing processes.

Innovation Solution

The proposed solution involves a semiconductor package design with vertically stacked semiconductor dies connected through a local interconnect device, incorporating deep trench capacitors and a redistribution structure to enhance communication bandwidth, and using a molding process to protect the passive devices during encapsulation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If semiconductor dies are vertically stacked to increase integration density, then the number of components per unit area increases, but the communication bandwidth between stacked dies becomes a limiting factor

Engineering Contradiction:
Improveintegration densityVSAvoidcommunication bandwidth
Core Design Contradiction:
Quantity of substanceVSLoss of information

Solution Approach 1:

The patent segments the interconnection system into multiple parallel pathways by providing multiple conductive joints between stacked semiconductor dies. This segmentation allows data communication to occur simultaneously through multiple channels, thereby increasing overall communication bandwidth while maintaining high integration density through vertical stacking.

Inventive Principle:
Principle #1Segmentation

2Reliability

If deep trench capacitors are embedded in semiconductor substrates to improve power integrity, then power delivery capability increases, but the manufacturing complexity and difficulty increase

Engineering Contradiction:
Improvepower integrityVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by forming deep trench capacitors and their conductive structures before stacking the semiconductor dies. The capacitors are pre-integrated into the substrate with conductive joints prepared in advance, which simplifies the subsequent stacking process and reduces overall manufacturing complexity while maintaining power integrity.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The deep trench capacitors are nested within the semiconductor substrate structure, with conductive joints embedded inside the substrate. This nesting approach integrates multiple functions (capacitance, conduction, structural support) into a single compact unit, reducing the number of separate manufacturing steps and lowering overall device complexity.

Inventive Principle:
Principle #7Nested doll (Nesting)

3Ease of manufacture

If conventional packaging techniques are used to encapsulate stacked dies, then the manufacturing process is simpler, but the embedded passive devices lack adequate protection

Engineering Contradiction:
Improveencapsulation process simplicityVSAvoidpassive device protection
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent employs composite encapsulation materials that provide both mechanical protection and electrical isolation for the embedded passive devices. The encapsulant is formulated to protect sensitive capacitor structures from moisture and physical damage while maintaining the simplicity of the encapsulation process, thereby achieving both ease of manufacture and reliable device protection.

Inventive Principle:
Principle #40Composite materials

Data Source

PatentUS20250132296A1Semiconductor package and manufacturing method thereof
Publication Date: 2025.04.24 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250132296A1 patent drawing
  • US20250132296A1 patent drawing
  • US20250132296A1 patent drawing

AI summary

A semiconductor package includes an interposer including a first redistribution structure, a first semiconductor die electrically coupled to the first redistribution structure through conductive joints, and a first encapsulant disposed on the first redistribution structure and laterally covering the first semiconductor die. The first semiconductor die includes a semiconductor substrate including a first side facing the first redistribution structure and a second side opposite to the first side, a through substrate via provided within the semiconductor substrate, and a passive device disposed between the second side of the semiconductor substrate and the conductive joints.